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Werbowy, Aleksander
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- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
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document
Reactive impulse plasma ablation deposited barium titanate thin films on silicon
Abstract
Thin (100 nm) nanocrystalline dielectric films of lanthanum doped barium titanate were produced on Si substrates by means of reactive impulse plasma ablation deposition (IPD) from BaTiO3 + La2O3 (2 wt.%) target. Scanning electron microcopy and atomic force microscopy showed that the obtained layers were dense ceramics of uniform thickness with average roughness Ra = 2.045 nm and the average grain size of the order of 15 nm. Measurements of current-voltage (IV) characteristics of metal-insulator-semiconductor (MIS) structures, produced by evaporation of metal (Al) electrodes on top of barium titanate films, allowed to determine that the leakage current density and critical electric field intensity (EBR) of investigated layers ranged from 10-12 to 10-6 A cm-2 and from 0.2 to 0.5 MV cm-1, respectively. Capacitance-voltage (C-V) measurements of the same structures were performed in accumulation state showing that the dielectric constant value (εri) of films is of the order of 20.