693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Firek, Piotr
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2017SEM and Raman studies of CNT films on porous Sicitations
- 2016Comparison of the structural and corrosion properties of the graphene/SiN(200) coating system deposited on titanium alloy surfaces covered with SiN transition layerscitations
- 2016Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application
- 2015Sensing properties of periodic stack of nano-films deposited with various vapor-based techniques on optical fiber end-facecitations
- 2015Influence of Substrate Type on Structure of C-Pd Thin Filmscitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
Places of action
| Organizations | Location | People |
|---|
booksection
Characterization of thin Gd2O3 magnetron sputtered layers
Abstract
Reactive magnetron sputtering technique using O2/Ar gas mixture was used to deposit Gd2O3 layers. Following metallization process of Al allowed to create MIS structures, which electrical parameters (κ, Dit, UFB, ρ, etc.) were measured using high frequency C-V equipment. Created layers exhibit high permittivity (κ≈12) at 100kHz. I-V measurements point out on maximum electric break down field Ebr≈0.4 MV/cm and maximum break down voltage Ubr ≈ 16V. Layers were morphologically tested using AFM technique (Ra ≈ 0.5÷2nm). Layer thicknesses as well as refractive indexes (RI ≈ 1.50÷2.05) were estimated using ellipsometry measurements.