| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morgan, Katrina Anne
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride doping
- 2023Conformal CVD-grown MoS2 on three-dimensional woodpile photonic crystals for photonic bandgap engineeringcitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2021Manufacturing of GLS-Se glass rods and structured preforms by extrusion for optical fiber drawing for the IR regioncitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019High-throughput physical vapour deposition flexible thermoelectric generatorscitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Structural modification of Ga-La-S glass for a new family of chalcogenidescitations
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memorycitations
- 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer depositioncitations
- 2016Advanced CVD technology for emerging transition metal di-chalcogenides
- 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devicescitations
Places of action
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article
Manufacturing of GLS-Se glass rods and structured preforms by extrusion for optical fiber drawing for the IR region
Abstract
<p>Chalcogenide glasses are amorphous solid materials formed from chalcogen elements bonding with metals to form typically in binary or tertiary compounds. One family of chalcogenide glasses, based on gallium and lanthanum sulphides, possesses properties important for the infrared (IR) window transmissions and IR applications; these include thermal stability, high solubility of rare earth ions, low phonon energy and high laser damage threshold. Efforts have been made to produce new chalcogenide glasses that can extend the IR transmission window further into the IR. Work has led to the successful melting of a selenium-modified gallium lanthanum sulphide (GLS-Se) glass that can transmit up to 15 μm, however these glasses have, to date, only been demonstrated in bulk glass form. We aim to develop processes for the fabrication of chalcogenide optical fiber to exploit the properties of chalcogenide glasses. Several potential applications include sensing for the civil, medical, and military areas, as these materials offer transmission over much of the molecular fingerprint region (2 to 25 μm). The aim of our work is to understand and control the thermal properties and stability of GLS-Se glasses without compromising their optical properties, in order to produce transparent glass rods and demonstrate the feasibility in fabrication for structured optical preforms by extrusion, as the first step to achieve optical fiber from GLS-Se glass.</p>