| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schneider, Nathanaelle
Institut Photovoltaïque d’Île-de-France
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cellscitations
- 2024Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cellscitations
- 2024Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskitescitations
- 2024Doped SnO 2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atomscitations
- 2021Chemical Passivation with Phosphonic Acid Derivatives of ZnO Deposited by Atomic Layer Deposition and Its Influence on the Halide Perovskite Interfacecitations
- 2020Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contactscitations
- 2020ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cellscitations
- 2020In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Depositioncitations
- 2018Highly efficient MoOx-free semitransparent perovskite cell for 4 T tandem application improving the efficiency of commercially-available Al-BSF siliconcitations
- 2018New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cellcitations
- 2018New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se 2 thin film solar cellcitations
Places of action
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article
Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cells
Abstract
<jats:p>Access to finely tuned thin films that can act as electron transport layer (ETL) and adapt to the absorber composition and whole cell fabrication process is key to achieve efficient perovskite-based solar cells. In this study, the growth of mixed niobium-titanium oxide (Nb-TiO2) thin films by atomic layer deposition and its use to extract photogenerated electrons is reported. Films were obtained at 200 °C from titanium (IV) i-propoxide, (t-butylimido)tris(diethylamido)niobium(V), and water by introducing Nb2O5 growth cycle in a TiO2 matrix. Process parameters (order of precursor introduction, cycle ratio) were optimized; the growth mechanism and the effective Nb incorporation were investigated by an in situ quartz crystal microbalance and x-ray photoelectron spectroscopy. The composition, morphology, structural, and optoelectronic properties of the as-deposited films were determined using a variety of characterization techniques. As a result, a fine control of the film properties (between TiO2 and Nb2O5 ones) could be achieved by tuning Nb content. To allow a successful implementation in solar devices, a comprehensive annealing study under several conditions (temperatures, various atmospheres) was conducted leading to an evolution of the optical properties due to a morphological change. Ultimately, the incorporation of these 15 nm-thick films in mesoscopic perovskite solar cells as ETL shows an improvement of the cell performances and of their stability with increasing Nb content, in comparison of both TiO2 and Nb2O5 pure compounds, reaching power conversion efficiency up to 18.3% and a stability above 80% of its nominal value after 138 h under illumination.</jats:p>