| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Yang, Yang
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Topics
Publications (26/26 displayed)
- 2024Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor depositioncitations
- 2024Hybrid Bonding Bottlebrush Polymers Grafted from a Supramolecular Polymer Backbonecitations
- 2024Unraveling the Mechanism of Alkali Metal Fluoride Post‐Treatment of SnO<sub>2</sub> for Efficient Planar Perovskite Solar Cellscitations
- 2024Oxygen-Mediated (0D) Cs4PbX6 Formation during Open-Air Thermal Processing Improves Inorganic Perovskite Solar Cell Performancecitations
- 2024Width-Dependent Growth of Atomically Thin Quantum Nanoribbons
- 2023Micromechanics of intra-laminar hybrid lamina with hollow fibres:
- 2023Micromechanics of intra-laminar hybrid lamina with hollow fibres::a RVE model
- 2022Origin of {112} < 111 > antitwinning in a Ti-24Nb-4Zr-8Sn superelastic single crystalcitations
- 2021Fully integrated flexible dielectric monitoring sensor system for real-time in situ prediction of the degree of cure and glass transition temperature of an epoxy resincitations
- 20213D printing for polymer/particle-based processing: A reviewcitations
- 2019Ultra-long-term reliable encapsulation using an atomic layer deposited Hfo2/Al2o3/Hfo2 triple-interlayer for biomedical implantscitations
- 2018High-performance p-type multicrystalline silicon (mc-Si)citations
- 2018Pitch measurements validation of a structural coloured steel insert using Scanning Confocal Microscopy (SCM) and Atomic Force Microscopy (AFM)
- 20183D multifunctional composites based on large-area stretchable circuit with thermoforming technologycitations
- 2017Ultrafast magnetization reversal by picosecond electrical pulsescitations
- 2017Arbitrarily shaped 2.5D circuits using stretchable interconnects embedded in thermoplastic polymerscitations
- 2017Influence of Fullerene Acceptor on the Performance, Microstructure, and Photophysics of Low Bandgap Polymer Solar Cellscitations
- 2017Enhancing Mechanical Properties of Nanocomposites Using Interconnected Carbon Nanotubes (<i>i</i>CNT) as Reinforcementcitations
- 2016One-time deformable thermoplastic devices based on flexible circuit board technologycitations
- 2016RTM Production Monitoring of the A380 Hinge Arm Droop Nose Mechanism: A Multi-Sensor Approachcitations
- 2016Deformation twinning in the full-α″ martensitic Ti–25Ta–20Nb shape memory alloycitations
- 2015Deformable microsystem for in situ cure degree monitoring of GFRP(Glass Fibre Reinforced Plastic)
- 2015Laser-based surface preparation of composite laminates leads to improved electrodes for electrical measurementscitations
- 2015Free-form 2.5D thermoplastic circuits using one-time stretchable interconnections
- 2014Analysis of interlaminar fracture toughness and damage mechanisms in composite laminates reinforced with sprayed multi-walled carbon nanotubescitations
- 2013Continued development of all-back-contact silicon wafer solar cells at ANUcitations
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article
Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition
Abstract
<jats:p>Metalorganic chemical vapor deposition (MOCVD) is a promising technique for wafer-scale synthesis of MoS2 monolayers for 2D field-effect transistors (2D-FETs) and related devices. Epitaxial growth of MoS2 on sapphire provides films that are crystallographically well-oriented but typically contain low-angle grain boundaries (e.g., mirror twins), voids, and other defects depending on growth conditions and substrate characteristics. In this study, we investigate microstructure, optical properties, and field-effect characteristics of wafer-scale MoS2 monolayers grown by MOCVD on c-plane sapphire over a narrow window of growth temperatures (900–1000 °C). The density of low-angle grain boundaries in the MoS2 monolayer was found to decrease dramatically from 50% areal coverage for films grown at 900 °C to 5% at 1000 °C. This decrease in low-angle grain boundary density is correlated with an increase in the room-temperature photoluminescence intensity of A excitons and a decrease in the full-width-half maximum (FWHM) of the Raman A1g peak, which are typically indicative of a general reduction in defects in MoS2. However, the best transport properties (e.g., mean field-effect mobility mFE = 17.3 cm2/V s) were obtained in MoS2 monolayers grown at an intermediate temperature of 950 °C. It was found that as the growth temperature increased, small regions bound by high-angle boundaries begin to appear within the monolayer and increase in areal coverage, from ∼2% at 900 °C to ∼5% at 950 °C to ∼10% at 1000 °C. The growth temperature of 950 °C, therefore, provides an intermediate condition where the combined effects of low-angle and high-angle boundaries are minimized. The results of this study provide guidance on MOCVD growth and characterization that can be used to further optimize the performance of MoS2 2D-FETs.</jats:p>