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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bacher, Gerd
University of Duisburg-Essen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor depositioncitations
- 2023Limitations of the Tauc Plot Methodcitations
- 2021Band Gap of Pb(Fe0.5Nb0.5)O-3 Thin Films Prepared by Pulsed Laser Depositioncitations
- 2021Link between structural and optical properties of Co<sub><i>x</i></sub>Fe<sub>3–<i>x</i></sub>O<sub>4</sub> nanoparticles and thin films with different Co/Fe ratioscitations
- 2021Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructurescitations
- 2021Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Depositioncitations
- 2020Low-Temperature MOCVD Deposition of Crystalline Ga2O3 Nanowires using t-Bu3Ga ; Low‐Temperature MOCVD of Crystalline Ga2O3 Nanowires using tBu3Gacitations
- 2005Chemical vapor synthesis of size-selected zinc oxide nanoparticlescitations
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article
Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition
Abstract
<jats:p>Metalorganic chemical vapor deposition (MOCVD) is a promising technique for wafer-scale synthesis of MoS2 monolayers for 2D field-effect transistors (2D-FETs) and related devices. Epitaxial growth of MoS2 on sapphire provides films that are crystallographically well-oriented but typically contain low-angle grain boundaries (e.g., mirror twins), voids, and other defects depending on growth conditions and substrate characteristics. In this study, we investigate microstructure, optical properties, and field-effect characteristics of wafer-scale MoS2 monolayers grown by MOCVD on c-plane sapphire over a narrow window of growth temperatures (900–1000 °C). The density of low-angle grain boundaries in the MoS2 monolayer was found to decrease dramatically from 50% areal coverage for films grown at 900 °C to 5% at 1000 °C. This decrease in low-angle grain boundary density is correlated with an increase in the room-temperature photoluminescence intensity of A excitons and a decrease in the full-width-half maximum (FWHM) of the Raman A1g peak, which are typically indicative of a general reduction in defects in MoS2. However, the best transport properties (e.g., mean field-effect mobility mFE = 17.3 cm2/V s) were obtained in MoS2 monolayers grown at an intermediate temperature of 950 °C. It was found that as the growth temperature increased, small regions bound by high-angle boundaries begin to appear within the monolayer and increase in areal coverage, from ∼2% at 900 °C to ∼5% at 950 °C to ∼10% at 1000 °C. The growth temperature of 950 °C, therefore, provides an intermediate condition where the combined effects of low-angle and high-angle boundaries are minimized. The results of this study provide guidance on MOCVD growth and characterization that can be used to further optimize the performance of MoS2 2D-FETs.</jats:p>