| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dendooven, Jolien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (34/34 displayed)
- 2024Atomic layer deposition for tuning the surface chemical composition of nickel iron phosphates for oxygen evolution reaction in alkaline electrolyzerscitations
- 2024Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin filmscitations
- 2023Atomic layer deposition of yttrium oxide as a protective coating for lithium metal anodes
- 2023Crystalline tin disulfide by low-temperature plasma-enhanced 2 atomic layer deposition as an electrode material for Li-ion batteries 3 and CO2 electroreductioncitations
- 2023Low temperature area selective atomic layer deposition of ruthenium dioxide thin films using polymers as inhibition layerscitations
- 2023Low temperature area selective atomic layer deposition of ruthenium dioxide thin films using polymers as inhibition layerscitations
- 2023Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin filmscitations
- 2023Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin filmscitations
- 2022Titanium carboxylate molecular layer deposited hybrid films as protective coatings for lithium-ion batteriescitations
- 2022Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactantcitations
- 2022Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Propertiescitations
- 2022Shuffling atomic layer deposition gas sequences to modulate bimetallic thin films and nanoparticle propertiescitations
- 2022Atomic layer deposition of ruthenium dioxide based on redox reactions between alcohols and ruthenium tetroxidecitations
- 2022Atomic layer deposition of metal phosphatescitations
- 2022Plasma-enhanced atomic layer deposition of nickel and cobalt phosphate for lithium ion batteriescitations
- 2021Influence of Alumina Addition on the Optical Properties and the Thermal Stability of Titania Thin Films and Inverse Opals Produced by Atomic Layer Deposition
- 2021In situ study of noble metal atomic layer deposition processes using grazing incidence small angle X-ray scattering
- 2021In situ XAS/SAXS study of Al2O3-coated PtGa catalysts for propane dehydrogenationcitations
- 2021Covalent graphite modification by low-temperature photocatalytic oxidation using a titanium dioxide thin film prepared by atomic layer depositioncitations
- 2020Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettabilitycitations
- 2018Kinetics of Lifetime Changes in Bimetallic Nanocatalysts Revealed by Quick X-ray Absorption Spectroscopycitations
- 2018Voltage-controlled ON−OFF ferromagnetism at room temperature in a single metal oxide filmcitations
- 2018Voltage-controlled ON-OFF ferromagnetism at room temperature in a single metal oxide filmcitations
- 2017Plasma-enhanced atomic layer deposition of silver using Ag(fod)(<tex>$PEt_{3}$</tex>) and <tex>$NH_{3}$</tex>-plasmacitations
- 2017Size- and composition-controlled Pt–Sn bimetallic nanoparticles prepared by atomic layer depositioncitations
- 2016Atomic layer deposition route to tailor nanoalloys of noble and non-noble metalscitations
- 2016Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlatticescitations
- 2016Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlatticescitations
- 2016Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealingcitations
- 2015Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitrycitations
- 2014Synchrotron based in situ characterization during atomic layer deposition
- 2012In Situ Monitoring of Atomic Layer Deposition in Nanoporous Thin Films Using Ellipsometric Porosimetrycitations
- 2011Tailoring nanoporous materials by atomic layer depositioncitations
- 2011Spacious and mechanically flexible mesoporous silica thin film composed of an open network of interlinked nanoslabscitations
Places of action
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article
Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin films
Abstract
<jats:p>Gallium (III) sulfide is a frontrunner for many energy storage and optoelectronic applications, which demand a deposition technique that offers a high level of control over thickness, composition, and conformality. Atomic layer deposition (ALD) is a potential technique in this regard. However, the state-of-the-art ALD processes for depositing Ga2S3 often lead to films that are amorphous and nonstoichiometric, and contain significant contaminations. Herein, we present a new plasma-enhanced atomic layer deposition (PE-ALD) process using the hexakis(dimethylamido)digallium precursor and H2S plasma coreactant to deposit high-quality Ga2S3 sulfide thin films and compare it to the thermal ALD process using the same reactants. While both cases exhibit typical ALD characteristics, substantial disparity is observed in the material properties. The PE-ALD process deposits crystalline Ga2S3 sulfide thin films at a temperature as low as 125 °C with a growth per cycle of 1.71 Å/cycle. Additionally, the PE-ALD process results in smooth and stoichiometric Ga2S3 films without any detectable carbon and oxygen contamination. Grazing incidence wide-angle x-ray scattering analysis indicates that the as-deposited Ga2S3 film crystallizes in a cubic structure with a preferred orientation along the [111] direction. The Ga2S3 film exhibits a transmittance of 70% and a bandgap of 3.2 eV with a direct transition.</jats:p>