| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Solano Minuesa, Eduardo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Solution-processed Pb(Zr,Ti)O3 thin films with strong remnant Pockels coefficientcitations
- 2023Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin filmscitations
- 2023Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin filmscitations
- 2022Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Propertiescitations
- 2022Shuffling atomic layer deposition gas sequences to modulate bimetallic thin films and nanoparticle propertiescitations
- 2022Temperature-induced polymorphism of a benzothiophene derivative: reversibility and impact on the thin film morphologycitations
- 2022An embedded interfacial network stabilizes inorganic CsPbI3 perovskite thin filmscitations
- 2020Self-assembly of block copolymers under non-isothermal annealing conditions as revealed by grazing-incidence small-angle X-ray scatteringcitations
- 2019Poly(Cyclohexene Phthalate) Nanoparticles for Controlled Dasatinib Delivery in Breast Cancer Therapycitations
- 2019Thermal unequilibrium of strained black CsPbI3 thin filmscitations
- 2018ALD-developed plasmonic two-dimensional Au-WO3-TiO2 heterojunction architectonics for design of photovoltaic devicescitations
- 2017Size- and composition-controlled Pt–Sn bimetallic nanoparticles prepared by atomic layer depositioncitations
- 2016Atomic layer deposition route to tailor nanoalloys of noble and non-noble metalscitations
Places of action
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article
Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin films
Abstract
<jats:p>Gallium (III) sulfide is a frontrunner for many energy storage and optoelectronic applications, which demand a deposition technique that offers a high level of control over thickness, composition, and conformality. Atomic layer deposition (ALD) is a potential technique in this regard. However, the state-of-the-art ALD processes for depositing Ga2S3 often lead to films that are amorphous and nonstoichiometric, and contain significant contaminations. Herein, we present a new plasma-enhanced atomic layer deposition (PE-ALD) process using the hexakis(dimethylamido)digallium precursor and H2S plasma coreactant to deposit high-quality Ga2S3 sulfide thin films and compare it to the thermal ALD process using the same reactants. While both cases exhibit typical ALD characteristics, substantial disparity is observed in the material properties. The PE-ALD process deposits crystalline Ga2S3 sulfide thin films at a temperature as low as 125 °C with a growth per cycle of 1.71 Å/cycle. Additionally, the PE-ALD process results in smooth and stoichiometric Ga2S3 films without any detectable carbon and oxygen contamination. Grazing incidence wide-angle x-ray scattering analysis indicates that the as-deposited Ga2S3 film crystallizes in a cubic structure with a preferred orientation along the [111] direction. The Ga2S3 film exhibits a transmittance of 70% and a bandgap of 3.2 eV with a direct transition.</jats:p>