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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Kauppinen, Christoffer
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Air stable plasma passivation of GaAs at room temperature
- 2023Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- 2020Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaNcitations
- 2019Site-specific growth of oriented ZnO nanocrystal arrayscitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunctioncitations
- 2019Two-dimensional plasmons in a GaN/AlGaN heterojunction:Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronicscitations
- 2019Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
- 2019Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructurecitations
- 2017Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Depositioncitations
- 2017MOVPE growth of GaN on 6-inch SOI-substratescitations
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article
Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
Abstract
The effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated with commonly available materials. The refractive index, crystallinity, stoichiometry, and impurity concentrations were studied from films grown from trimethylaluminum and ammonia precursors at 300 ° C on Si(111) substrates. Additional energy provided by the atomic layer annealing step during each deposition cycle was found to enhance the crystallinity and stoichiometry and increase the refractive index and film density. A polycrystalline hexagonal film with a weak c-axis orientation was obtained on substrates with and without native oxide, which is promising for applications that require high quality films at low temperatures.