| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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La Magna, Antonino
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
- 2023Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloyscitations
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2023Spongy TiO<sub>2</sub> layers deposited by gig-lox sputtering processes: Contact angle measurementscitations
- 2022Plasmon resonances in silicon quantum wires
- 2022Multiscale Simulations for Defect-Controlled Processing of Group IV Materialscitations
- 2021Laser annealing processes in semiconductor technology ; Laser annealing processes in semiconductor technology: Theory, modeling, and applications in nanoelectronics
- 2019On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted siliconcitations
- 2017Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy
- 2017Pervasive infiltration and multi-branch chemisorption of N-719 molecules into newly designed spongy TiO2 layers deposited by gig-lox sputtering processescitations
- 2017Ambipolar MoS2Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalizationcitations
- 2016Controlled Al3+ Incorporation in the ZnO Lattice at 188 degrees C by Soft Reactive Co-Sputtering for Transparent Conductive Oxidescitations
- 2014Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealingcitations
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article
Spongy TiO<sub>2</sub> layers deposited by gig-lox sputtering processes: Contact angle measurements
Abstract
<jats:p> The use of nanostructured materials is increasingly widespread thanks to their particular properties that can improve the performance of devices in various scientific applications. One of them is in the architecture of perovskite solar cells characterized by high photoconversion efficiency values that make them able to compete with silicon solar cells. In this framework, we deposited TiO[Formula: see text] sponges by reactive sputtering based on a grazing-incidence geometry combined with the local oxidation of species. The deposited material gains 50% porosity in volume through depths of hundreds of nanometers and consists of a forest of uniform rods separated by mesopores (pipelines) arising from the grazing geometry. Many previous studies showed how TiO[Formula: see text] can improve the efficiency of perovskite solar cells. In this article, we investigated the change of the wettability values of the TiO[Formula: see text] samples before and after a postdeposition thermal annealing treatment. For comparison, the influence of the annealing on the wettability of the glass substrate is also reported. </jats:p>