| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hessler-Wyser, Aïcha
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskitescitations
- 2024Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskitescitations
- 2024A universal perovskite/C60 interface modification via atomic layer deposited aluminum oxide for perovskite solar cells and perovskite–silicon tandemscitations
- 2023Microwave plasma-assisted reactive HiPIMS of InN films: plasma environment and material characterisationcitations
- 2022Three-dimensional microstructural changes in the Ni–YSZ solid oxide fuel cell anode during operationcitations
- 2022Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor depositioncitations
- 2022Mechanical and microstructural integrity of nickel–titanium and stainless steel laser joined wirescitations
- 2018Amorphous gallium oxide grown by low-temperature PECVDcitations
- 2017Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivationcitations
- 2016Tuning the Optoelectronic Properties of ZnOcitations
- 201522.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collectorcitations
- 2011Design of experiment approach applied to reducing and oxidizing tolerance of anode supported solid oxide fuel cell part II: electrical, electrochemical and microstructural characterization of tape-cast cellscitations
- 2010In situ redox cycle of a nickel–YSZ fuel cell anode in an environmental transmission electron microscopecitations
- 2010In situ redox cycle of a nickel–YSZ fuel cell anode in an environmental transmission electron microscopecitations
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article
Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition
Abstract
<jats:p> This paper reports on the fabrication of In[Formula: see text]Ga[Formula: see text]N (InGaN) layers with various compositions ranging from InN to GaN using a cost-effective low-temperature plasma-enhanced chemical vapor deposition (PECVD) method and analyzes the influence of deposition parameters on the resulting films. Single-phase nanocrystalline InGaN films with crystallite size up to 30 nm are produced with deposition temperatures in the range of 180–250 [Formula: see text]C using the precursors trimethylgallium, trimethylindium, hydrogen, nitrogen, and ammonia in a parallel-plate type RF-PECVD reactor. It is found that growth rate is a primary determinant of crystallinity, with rates below 6 nm/min producing the most crystalline films across a range of several compositions. Increasing In content leads to a decrease in the optical bandgap, following Vegard’s law, with bowing being more pronounced at higher growth rates. Significant free-carrier absorption is observed in In-rich films, suggesting that the highly measured optical bandgap (about 1.7 eV) is due to the Burstein–Moss shift. </jats:p>