| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lu, Yu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2022The influence of thermal oxidation on the microstructure, fatigue properties, tribological and in vitro behaviour of laser powder bed fusion manufactured Ti-34 Nb-13Ta-5Zr-0.2O alloycitations
- 2022Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxidescitations
- 2019Modelling of the heat-affected and thermomechanically affected zones in a Ti-6Al-4V inertia friction weldcitations
- 2014La2Ti2O7 perovskite compound: from thin film deposition to notch antenna miniaturization
- 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin filmscitations
- 2014Miniaturized notch antenna based on lanthanum titanium perovskite oxide thin filmscitations
- 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterizationcitations
- 2014Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterizationcitations
- 2014Functional dielectric oxide and oxynitride perovskite thin films deposited by reactive magnetron sputtering
- 2013Reactive Sputtering Deposition of Perovskite Oxide and Oxynitride Lanthanum Titanium Films: Structural and Dielectric Characterizationcitations
- 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputteringcitations
- 2013Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputteringcitations
- 2013A new lanthanum titanium oxide perovskite compound: thin film deposition and dielectric characterization.
- 2013Functional dielectric oxide and oxynitride compounds in the perovskite La-Ti-O-N system: from thin film sputtering deposition to dielectric characterization
- 2012Processing, crystallization behavior and dielectric performance of perovskite LaTiO x N y thin films
- 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequenciescitations
- 2011Perovskite oxynitride LaTiOxNy thin films : Dielectric characterization in low and high frequenciescitations
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article
Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides
Abstract
<jats:p> To enable greater control over thermal atomic layer deposition (ALD) of molybdenum disulfide (MoS<jats:sub>2</jats:sub>), here we report studies of the reactions of molybdenum hexafluoride (MoF<jats:sub>6</jats:sub>) and hydrogen sulfide (H<jats:sub>2</jats:sub>S) with metal oxide substrates from nucleation to few-layer films. In situ quartz crystal microbalance experiments performed at 150, 200, and 250 °C revealed temperature-dependent nucleation behavior of the MoF<jats:sub>6</jats:sub> precursor, which is attributed to variations in surface hydroxyl concentration with temperature. In situ Fourier transform infrared spectroscopy coupled with ex situ x-ray photoelectron spectroscopy (XPS) indicated the presence of molybdenum oxide and molybdenum oxyfluoride species during nucleation. Density functional theory calculations additionally support the formation of these species as well as predicted metal oxide to fluoride conversion. Residual gas analysis revealed reaction by-products, and the combined experimental and computational results provided insights into proposed nucleation surface reactions. With additional ALD cycles, Fourier transform infrared spectroscopy indicated steady film growth after ∼13 cycles at 200 °C. XPS revealed that higher deposition temperatures resulted in a higher fraction of MoS<jats:sub>2</jats:sub> within the films. Deposition temperature was found to play an important role in film morphology with amorphous films obtained at 200 °C and below, while layered films with vertical platelets were observed at 250 °C. These results provide an improved understanding of MoS<jats:sub>2</jats:sub> nucleation, which can guide surface preparation for the deposition of few-layer films and advance MoS<jats:sub>2</jats:sub> toward integration into device manufacturing. </jats:p>