| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Souqui, Laurent
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC†citations
- 2024On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCcitations
- 2023Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboroncitations
- 2022Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor depositioncitations
- 2022Chemical vapor deposition of sp<sup>2</sup>-boron nitride films on Al<sub>2</sub>O<sub>3</sub> (0001), (112¯0), (11¯02), and (101¯0) substratescitations
- 2020Chemical vapor deposition of sp(2)-boron nitride on Si(111) substrates from triethylboron and ammonia: Effect of surface treatmentscitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
Places of action
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article
Chemical vapor deposition of sp<sup>2</sup>-boron nitride films on Al<sub>2</sub>O<sub>3</sub> (0001), (112¯0), (11¯02), and (101¯0) substrates
Abstract
<jats:p> Thin films of boron nitride in its sp<jats:sup>2</jats:sup>-hybridized form (sp<jats:sup>2</jats:sup>-BN) have potential uses in UV devices and dielectrics. Here, we explore chemical vapor deposition (CVD) of sp<jats:sup>2</jats:sup>-BN on various cuts of sapphire: Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> [Formula: see text], Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> [Formula: see text], Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> [Formula: see text], and Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (0001) using two CVD processes with two different boron precursors triethylborane and trimethylborane. Fourier transform infrared spectroscopy shows that sp<jats:sup>2</jats:sup>-BN grows on all the sapphire substrates; using x-ray diffraction, 2θ/ω diffractogram shows that only Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> [Formula: see text] and Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> (0001) rendered crystalline films: and using phi(ϕ)-scans, growth of the rhombohedral polytype (r-BN) films on these substrates is confirmed. These films were found to be epitaxially grown on an AlN interlayer with comparatively higher crystalline quality for the films grown on the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> [Formula: see text] substrate, which is determined using omega(ω)-scans. Our study suggests that Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> [Formula: see text] is the most favorable sapphire substrate to realize the envisioned applications of r-BN films. </jats:p>