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Nieminen, Heta-Elisa
University of Helsinki
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Publications (6/6 displayed)
- 2022Reaction mechanism studies on atomic layer deposition process of AlF3citations
- 2021In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin filmscitations
- 2020In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin filmscitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2019Intercalation of Lithium Ions from Gaseous Precursors into beta-MnO2 Thin Films Deposited by Atomic Layer Depositioncitations
- 2019Intercalation of Lithium Ions from Gaseous Precursors into β-MnO 2 Thin Films Deposited by Atomic Layer Depositioncitations
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article
Reaction mechanism studies on atomic layer deposition process of AlF3
Abstract
In this work, the reaction mechanism in the atomic layer deposition (ALD) process of AlF3 thin films is studied with in situ quartz crystal microbalance and quadrupole mass spectrometer. The depositions are done with AlCl3 and TiF4 as precursors. Similar to many metal fluoride films deposited by ALD, the growth rate of the AlF3 is strongly temperature dependent. In addition, at low temperatures, the growth rate is exceptionally high for a traditional ALD process. In this study, the reasons behind these characteristics are studied and a detailed step-by-step mechanism for the AlF3 film growth process is presented. ; Peer reviewed