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Atosuo, Elisa Karoliina
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article
Atomic layer deposition of TbF3 thin films
Abstract
<p>Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluorides has remained low. In this work, we present an ALD process for TbF3 using tris(2,2,6,6-tetramethyl-3,5-heptanedionato)terbium and TiF4 as precursors. The films were grown at 175-350 degrees C. The process yields weakly crystalline films at the lowest deposition temperature, whereas strongly crystalline, orthorhombic TbF3 films are obtained at higher temperatures. The films deposited at 275-350 degrees C are exceptionally pure, with low contents of C, O, and H, and the content of titanium is below the detection limit (</p>