• Rokaya, Chakra
• Anam, Rafi Md Nazmul
• Ruhanen, Aleksi
• Forouzmehr, Matin
• Berger, Paul R.
• Lahtonen, Kimmo
• Lupo, Donald
• Honkanen, Mari Hetti
• Zambou, Serges

Abstract

<p>The rise of low-temperature atomic layer deposition (ALD) has made it very attractive to produce high- κ dielectric for flexible electronic devices. Similarly, selective deposition of ALD films is of great relevance for circuitry. We demonstrated a simple method of using a physical mask to block the film's growth in selected polymeric and flexible substrate areas during a low-pressure ALD process. A low-cost silicone adhesive polyimide tape was used to manually mask selected areas of bare substrates and aluminum strips deposited by evaporation. 190 cycles of aluminum oxide (Al 2O 3) and hafnium oxide (HfO 2) were deposited at temperatures ranging from 100 to 250 °C. Using x-ray photoelectron spectroscopy (XPS) analysis and energy dispersive x-ray spectroscopy (EDS), we showed that the mask was effective in protecting the areas under the tape. The mask did not show any modification of shape for an exposure of 10 h at 250 °C, hence keeping the form of the masked area intact. An analysis of the unmasked area by ellipsometry (632.8 nm) and x ray shows a regular film with a thickness variation under 2 nm for a given temperature and constant refractive index. EDS, selected-area XPS, and imaging XPS show an evident change of elemental content at the interface of two areas. By XPS, we established that the structure of the films was not affected by the mask, the films were stoichiometric, and there was no effect of outgassing from the adhesive film. </p>

Topics

• impedance spectroscopy
• x-ray photoelectron spectroscopy
• aluminum oxide
• aluminium
• ellipsometry
• Energy-dispersive X-ray spectroscopy
• evaporation
• hafnium
• atomic layer deposition
• hafnium oxide