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Sturm, Jacobus
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Publications (8/8 displayed)
- 2019Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensorcitations
- 2018Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation thresholdcitations
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
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article
Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensor
Abstract
<p>In this work, the authors expose transferred multilayer graphene on a yttrium based hydrogen sensor. Using spectroscopic ellipsometry, they show that graphene, as well as amorphous carbon reference films, reduce diffusion of hydrogen to the underlying Y layer. Graphene and C are both etched due to exposure to atomic H, eventually leading to hydrogenation of the Y to YH<sub>2</sub> and YH<sub>3</sub>. Multilayer graphene, even with defects originating from manufacturing and transfer, showed a higher resistance against atomic H etching compared to amorphous carbon films of a similar thickness.</p>