| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Guillemoles, Jean-François
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures
- 2023Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation.citations
- 2023The modulated photoluminescence technique versus temperature: opportunities for better determination of trap parameters
- 2023The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wellscitations
- 2022In – depth chemical and optoelectronic analysis of triple-cation perovskite thin films by combining XPS profiling and PL Imagingcitations
- 2021Mapping Transport Properties of Halide Perovskites via Short-Time-Dynamics Scaling Laws and Subnanosecond-Time-Resolution Imagingcitations
- 2021In – depth chemical and optoelectronic analysis of triple-cation perovskite thin films by combining XPS profiling and PL Imagingcitations
- 2021The influence of relative humidity upon Cu(In,Ga)Se2 thin-film surface chemistry: an X-ray photoelectron spectroscopy studycitations
- 2020Backside light management of 4-terminal bifacial perovskite/silicon tandem PV modules evaluated under realistic conditionscitations
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
- 2019MIS Structures for Solar Cells Perimeter Passivation
- 2019Cu depletion on Cu(In,Ga)Se2 surfaces investigated by chemical engineering: An x-ray photoelectron spectroscopy approachcitations
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Tuning the chemical properties of europium complexes as downshifting agents for copper indium gallium selenide solar cellscitations
- 2017EuIII‐Based Nanolayers as Highly Efficient Downshifters for CIGS Solar Cellscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
Places of action
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article
Cu depletion on Cu(In,Ga)Se2 surfaces investigated by chemical engineering: An x-ray photoelectron spectroscopy approach
Abstract
Photovoltaic cells based on CIGS [Cu(In,Ga)Se2] absorber technology are among the most efficient thin film solar cells and already an industrial reality. Room for improvement is still possible in the manufacturing process to approach the theoretical ultimate efficiency. This not only requires an optimal absorber material but also the control of the CIGS interface chemistry, especially at the front side with the buffer layer which represents one of the main challenges. In this paper, thanks to x-ray photoelectron spectroscopy (XPS) analysis, the CIGS surface chemical composition is studied after acid (HCl) and basic (KCN) samples dipping. Both are regularly employed to prepare CIGS surfaces. XPS monitoring of the surface composition evolution under air aging at an ambient atmosphere and over a period of 120 days is presented, bringing fundamental information about the surface oxidation trends. If the HCl treatment gives a remarkable deoxidation state for the CIGS surface, it also yields a slightly Se enriched surface indicating the presence of a Cu2–xSe binary side phase, which is totally removed, as expected, by the KCN process. The present comparative study based on intentional air aging of starting HCl and KCN treated surfaces sheds light on the reorganization mechanism of this I-III-VI quaternary compound toward oxidation of clean CIGS surfaces, in ambient conditions. The oxidation process occurs concomitantly with an Na migration toward the surface, with soda-lime glass at the back contact, acting as a nonlimiting supply, asking the question of a surface mechanistic correlation during the CIGS surface oxidation.Photovoltaic cells based on CIGS [Cu(In,Ga)Se2] absorber technology are among the most efficient thin film solar cells and already an industrial reality. Room for improvement is still possible in the manufacturing process to approach the theoretical ultimate efficiency. This not only requires an optimal absorber material but also the control of the CIGS interface chemistry, especially at the front side with the buffer layer which represents one of the main challenges. In this paper, thanks to x-ray photoelectron spectroscopy (XPS) analysis, the CIGS surface chemical composition is studied after acid (HCl) and basic (KCN) samples dipping. Both are regularly employed to prepare CIGS surfaces. XPS monitoring of the surface composition evolution under air aging at an ambient atmosphere and over a period of 120 days is presented, bringing fundamental information about the surface oxidation trends. If the HCl treatment gives a remarkable deoxidation state for the CIGS surface, it also yields a slightly Se enric...