• Jones, Jacob L.
• Phaneuf, Raymond J.
• Liu, Yang
• Pulskamp, Jeffrey S.
• Strnad, Nicholas A.
• Polcawich, Ronald G.

Abstract

<jats:p>PbTiO3 (lead titanate) thin films were deposited by atomic layer deposition (ALD) and crystallized via rapid thermal anneal. The films were grown using lead bis(3-N,N-dimethyl-2-methyl-2-propanoxide) and tetrakis dimethylamino titanium as cation precursors. A combination of H2O and ozone was used as oxidizers. Phase-pure, stoichiometric PbTiO3 was confirmed using x-ray diffraction, Rutherford backscattering spectroscopy, and scanning transmission electron microscopy. Ferroelectric hysteresis loops obtained by patterning circular capacitors with areas of 4.92 × 10−4 cm2 indicate a Pmax = 48 μC/cm2, 2Pr = 60 μC/cm2, Ec1 = −73 kV/cm, Ec2 = 125 kV/cm, and a leakage current density of 15 μA/cm2 at 138 kV/cm. Capacitance versus voltage measurements were used to obtain a maximum dielectric constant of 290 at 85 kV/cm and loss tangent under 4% tested in the range of ±275 kV/cm. ALD PbTiO3 grown with near-ideal cation ratios crystallized into randomly oriented perovskite grains when grown on a sputtered Pt-coated Si substrate. A variation of rapid thermal anneal temperatures, ramp rates, and nucleation layers was investigated and did not have a significant effect on perovskite grain orientation.</jats:p>

Topics

• density
• perovskite
• grain
• phase
• x-ray diffraction
• thin film
• dielectric constant
• transmission electron microscopy
• texture
• titanium
• current density
• atomic layer deposition
• spectroscopy