| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schneider, Nathanaelle
Institut Photovoltaïque d’Île-de-France
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cellscitations
- 2024Fine tuning of Nb-incorporated TiO2 thin films by atomic layer deposition and application as efficient electron transport layer in perovskite solar cellscitations
- 2024Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskitescitations
- 2024Doped SnO 2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atomscitations
- 2021Chemical Passivation with Phosphonic Acid Derivatives of ZnO Deposited by Atomic Layer Deposition and Its Influence on the Halide Perovskite Interfacecitations
- 2020Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contactscitations
- 2020ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cellscitations
- 2020In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Depositioncitations
- 2018Highly efficient MoOx-free semitransparent perovskite cell for 4 T tandem application improving the efficiency of commercially-available Al-BSF siliconcitations
- 2018New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cellcitations
- 2018New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se 2 thin film solar cellcitations
Places of action
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article
New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
Abstract
<jats:p>A comparative chemical analysis of InxSy and In2(S,O)3 thin films grown by atomic layer deposition (ALD) and plasma-enhanced ALD, respectively, was performed to understand the challenges and issues related to the assistance of plasma, especially for the implementation of these films as ultrathin (&lt;50 nm) interfacial buffer layers in copper indium gallium diselenide (CIGS) solar cells. The films were synthesized using indium acetylacetonate [In(acac)3], hydrogen sulfide, and an Ar/O2 plasma as indium, sulfur, and oxygen precursors. Film growth mechanisms and chemistries were studied using gas phase measurements by quadrupole mass spectrometry and x-ray photoelectron spectroscopy for surface and in-depth characterizations. Distinctive signatures of thermal and plasma processes on the overall compositions of the films were evidenced, which were further discussed and explained. Added to this, the impact of the plasma on the underlying substrate, using silicon as a reference, was further investigated to identify its modification. This extensive study has led to a readjustment of the deposition conditions of In2(O,S)3 thin films and allowed promising implementation as buffer layers in CIGS solar cells.</jats:p>