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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Seppälä, Sanni
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Publications (4/4 displayed)
- 2018Atomic layer deposition of lanthanum oxide with heteroleptic cyclopentadienyl-amidinate lanthanum precursor - Effect of the oxygen source on the film growth and propertiescitations
- 2017Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and watercitations
- 2016Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Filmscitations
- 2014Heteroleptic Precursors for Atomic Layer Depositioncitations
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article
Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water
Abstract
Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl)<br/>amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with<br/>respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two<br/>ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films<br/>grown on soda lime glass and silicon substrates were uniform across the substrates. With the water<br/>process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the<br/>growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition<br/>and morphology. The films deposited with water showed crystallinity with the tetragonal SnO<br/>phase, and annealing in air increased the conductivity of the films while the SnO2 phase<br/>appeared. All the films deposited with ozone contained silicon as an impurity and were<br/>amorphous and nonconductive both as-deposited and after annealing. The films were further<br/>deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements.<br/>The TiO2 nanostructure functioned also as a test structure for conformality of the<br/>processes.