| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Zheshen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2024Engineered Porosity ZnO Sensor Enriched with Oxygen Vacancies Enabled Extraordinary Sub-ppm Sensing of Hydrogen Sulfide and Nitrogen Dioxide Air Pollution Gases at Low Temperature in Air
- 2022Iron carbide formation on thin iron films grown on Cu(1 0 0)citations
- 2022WO 3 Monomers Supported on Anatase TiO 2 (101), −(001), and Rutile TiO 2 (110):A Comparative STM and XPS Studycitations
- 2022WO3 Monomers Supported on Anatase TiO2(101), −(001), and Rutile TiO2(110)citations
- 2022Iron carbide formation on thin iron films grown on Cu(1 0 0):FCC iron stabilized by a stable surface carbidecitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Chemical Vapor Deposition of Cobalt and Nickel Ferrite Thin Films:Investigation of Structure and Pseudocapacitive Propertiescitations
- 2021Low-Temperature Growth of Graphene on a Semiconductorcitations
- 2021Low-Temperature Growth of Graphene on a Semiconductorcitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Chemical vapor deposition of cobalt and nickel ferrite thin films
- 2021Chemical Vapor Deposition of Cobalt and Nickel Ferrite Thin Films: Investigation of Structure and Pseudocapacitive Propertiescitations
- 2020From Precursor Chemistry to Gas Sensors:Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applicationscitations
- 2020Energy band alignment at the heterointerface between CdS and Ag-alloyed CZTScitations
- 2020Energy band alignment at the heterointerface between CdS and Ag-alloyed CZTScitations
- 2020Energy band alignment at the heterointerface between CdS and Ag-alloyed CZTScitations
- 2020From precursor chemistry to gas sensors
- 2018Formation of the layered conductive magnet CrCl 2 (pyrazine) 2 through redox-active coordination chemistrycitations
- 2018Formation of the layered conductive magnet CrCl2(pyrazine)2 through redox-active coordination chemistrycitations
- 2017Gold-supported two-dimensional cobalt oxyhydroxide (CoOOH) and multilayer cobalt oxide islandscitations
- 2017Growth of aluminum oxide on silicon carbide with an atomically sharp interfacecitations
- 2017Nanoporous Platinum Doped Cerium Oxides Thin Films Grown on Silicon Substrates:Ionic Platinum Localization and Stabilitycitations
- 2017Edge reactivity and water-assisted dissociation on cobalt oxide nanoislandscitations
- 2009Self-activated, self-limiting reactions on Si surfaces
Places of action
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article
Growth of aluminum oxide on silicon carbide with an atomically sharp interface
Abstract
The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation and insulating coatings. Although SiO 2 grown thermally on SiC is a possibility for the gate dielectric, this system has a number of problems related to the higher band gap of SiC, which energetically favors more interface states than for SiO 2 on Si, and the low dielectric constant of SiO 2 leading to 2.5× higher electric fields across the oxide than in the surface of SiC, and to a premature breakdown at the higher fields and higher temperatures that SiC devices are designed to operate under. As a replacement for SiO 2 , amorphous Al 2 O 3 thin film coatings have some strong advocates, both for n- and p-type SiC, due to the value of its band gap and the position of its band edges with respect to the band edges of the underlying semiconductor, a number of other material properties, and not the least due to the advances of the atomic-layer-deposition process. Exploring the fact that the chemical bonding of Al 2 O 3 is the strongest among the oxides and therefore stronger than in SiO 2 , the authors have previously shown how to form an Al 2 O 3 film on Si (111) and Si (100), by simply depositing a few atomic layers of Al on top of an ultrathin (0.8 nm) SiO 2 film previously grown on Si surfaces [Si (111) and Si (100)] and heating this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO 2 into a uniform layer of Al 2 O 3 with an atomically sharp interface between the Al 2 O 3 and the Si surface. In the present work, the same procedures are applied to form Al 2 O 3 on a SiC film grown on top of Si (111). The results indicate that a similar process, resulting in a uniform layer of 1-2 nm of Al 2 O 3 with an atomically sharp Al 2 O 3 /SiC interface, also works in this case.