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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morgen, Per
University of Southern Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Impact of drug compounds mechanical/deformation properties on the preparation of nano- and microsuspensionscitations
- 2024Impact of drug compounds mechanical/deformation properties on the preparation of nano- and microsuspensionscitations
- 2022Post-degradation case study of the membrane electrode assembly from a low-temperature PEMFC stack
- 2022Post-degradation case study of the membrane electrode assembly from a low-temperature PEMFC stack
- 2022En metode til at danne kobberlag på porøst aluminium oxid (PAO) på et substrat af aluminium legering ; A method for manufacturing copper film on porous aluminum oxide (pao) on an aluminum alloy substrate
- 2022Insights into Degradation of the Membrane–Electrode Assembly Performance in Low-Temperature PEMFC:the Catalyst, the Ionomer, or the Interface?citations
- 2022A method for manufacturing copper film on porous aluminum oxide (pao) on an aluminum alloy substrate
- 2022Insights into Degradation of the Membrane–Electrode Assembly Performance in Low-Temperature PEMFCcitations
- 2020Platinum recycling through electroless dissolution under mild conditions using a surface activation assisted Pt-complexing approachcitations
- 2020Platinum recycling through electroless dissolution under mild conditions using a surface activation assisted Pt-complexing approachcitations
- 2017Growth of aluminum oxide on silicon carbide with an atomically sharp interfacecitations
- 2016The effect of trace amounts of copper on the microstructure, stability and oxidation of macroporous silicon carbidecitations
- 2016The effect of trace amounts of copper on the microstructure, stability and oxidation of macroporous silicon carbidecitations
- 2016The role of aluminium as an additive element in the synthesis of porous 4H-silicon carbidecitations
- 2016The role of aluminium as an additive element in the synthesis of porous 4H-silicon carbidecitations
- 2015The role of Aluminium in the synthesis of Mesoporous 4H Silicon Carbide
- 2015The role of Aluminium in the synthesis of Mesoporous 4H Silicon Carbide
- 2013Investigations on sputter deposited LiCoO2 thin films from powder targetcitations
- 2009Self-activated, self-limiting reactions on Si surfaces
- 2006Epitaxial growth of Al on Si(1 1 1) with Cu buffer layerscitations
Places of action
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article
Growth of aluminum oxide on silicon carbide with an atomically sharp interface
Abstract
The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation and insulating coatings. Although SiO 2 grown thermally on SiC is a possibility for the gate dielectric, this system has a number of problems related to the higher band gap of SiC, which energetically favors more interface states than for SiO 2 on Si, and the low dielectric constant of SiO 2 leading to 2.5× higher electric fields across the oxide than in the surface of SiC, and to a premature breakdown at the higher fields and higher temperatures that SiC devices are designed to operate under. As a replacement for SiO 2 , amorphous Al 2 O 3 thin film coatings have some strong advocates, both for n- and p-type SiC, due to the value of its band gap and the position of its band edges with respect to the band edges of the underlying semiconductor, a number of other material properties, and not the least due to the advances of the atomic-layer-deposition process. Exploring the fact that the chemical bonding of Al 2 O 3 is the strongest among the oxides and therefore stronger than in SiO 2 , the authors have previously shown how to form an Al 2 O 3 film on Si (111) and Si (100), by simply depositing a few atomic layers of Al on top of an ultrathin (0.8 nm) SiO 2 film previously grown on Si surfaces [Si (111) and Si (100)] and heating this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO 2 into a uniform layer of Al 2 O 3 with an atomically sharp interface between the Al 2 O 3 and the Si surface. In the present work, the same procedures are applied to form Al 2 O 3 on a SiC film grown on top of Si (111). The results indicate that a similar process, resulting in a uniform layer of 1-2 nm of Al 2 O 3 with an atomically sharp Al 2 O 3 /SiC interface, also works in this case.