| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Yun, Hwanhui
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2020Layer Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly Anisotropic Black Ascitations
- 2020Ambipolar transport in van der Waals black arsenic field effect transistorscitations
- 2020Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformationscitations
- 2018Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopycitations
- 2015Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3citations
Places of action
| Organizations | Location | People |
|---|
article
Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3
Abstract
<jats:p>Owing to its high room-temperature electron mobility and wide bandgap, BaSnO3 has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO3 films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO3 films were thus grown on SrTiO3 (001) and LaAlO3 (001) substrates. Growth conditions for stoichiometric BaSnO3 were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO3 using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO3.</jats:p>