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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giusti, G.
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Publications (5/5 displayed)
- 2018Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer depositioncitations
- 2015Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applicationscitations
- 2013Electrically conductive epoxy nanocomposites containing carbonaceous fillers and in-situ generated silver nanoparticlescitations
- 2012Dielectric properties of pulsed-laser deposited indium tin oxide thin filmscitations
- 2009Microstructure–property relationships in thin film ITOcitations
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article
Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications
Abstract
Undoped and nitrogen doped TiO2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 degrees C and nitrogen incorporation was achieved by using titanium isopropoxide, NH3 and/or N2O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Omega cm (+/-10 Omega cm) combined with an average total transmittance of 60% in the 400-1000 nm wavelength range. Eventually, TiO2 thin films were deposited on the 3D metallic foam template.