| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sajavaara, Timo
University of Jyväskylä
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (55/55 displayed)
- 2024Enhancing electrocatalytic activity in metallic thin films through surface segregation of carboncitations
- 2024Ni Drastically Modifies the Microstructure and Electrochemistry of Thin Ti and Cr Layerscitations
- 2023Enhancing electrocatalytic activity in metallic thin films through surface segregation of carboncitations
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Size dependent swift heavy ion induced Au nanoparticle elongation in SiO2 matrixcitations
- 2022Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinccitations
- 2022Spatial ALD of Al2O3 and ZnO using heavy watercitations
- 2022Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactantcitations
- 2022Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments
- 2022Thermomechanical properties of aluminum oxide thin films made by atomic layer depositioncitations
- 2021Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Depositioncitations
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2021Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer depositioncitations
- 2021What Determines the Electrochemical Properties of Nitrogenated Amorphous Carbon Thin Films?citations
- 2021Phosphites as precursors in atomic layer deposition thin film synthesiscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various annealing treatmentscitations
- 2019Room-Temperature Micropillar Growth of Lithium–Titanate–Carbon Composite Structures by Self-Biased Direct Current Magnetron Sputtering for Lithium Ion Microbatteriescitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2018High-quality superconducting titanium nitride thin film growth using infra-red pulsed laser depositioncitations
- 2018Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxidescitations
- 2018Atomic layer deposition of Ti-Nb-O thin films onto electrospun fibers for fibrous and tubular catalyst support structurescitations
- 2018Tribological properties of thin films made by atomic layer deposition sliding against siliconcitations
- 2017Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO<sub>2</sub>citations
- 2017Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivationcitations
- 2017Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configurationcitations
- 2016Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Filmscitations
- 2016Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2015Nanotribological, nanomechanical and interfacial characterization of Atomic Layer Deposited TiO2 on a silicon substratecitations
- 2015Atomic layer deposited lithium aluminum oxidecitations
- 2014Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness and adhesioncitations
- 2013Atomic layer deposition of LixTiyOz thin filmscitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion:residual stress, elastic modulus, hardness and adhesion
- 2013Studies on atomic layer deposition of MOF-5 thin filmscitations
- 2013Studies on atomic layer deposition of MOF-5 thin filmscitations
- 2013Variation of lattice constant and cluster formation in GaAsBicitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
- 2013Low temperature atomic layer deposition of noble metals using ozone and molecular hydrogen as reactantscitations
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF(6) based plasmascitations
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmascitations
- 2011Corrosion Protection of Steel with Oxide Nanolaminates Grown by Atomic Layer Depositioncitations
- 2011Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperaturescitations
- 2011Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide filmscitations
- 2011Atomic Layer Deposition and Characterization of Aluminum Silicate Thin Films for Optical Applicationscitations
- 2009Influence of Substrate Bias on the Structural and Dielectric Properties of Magnetron-Sputtered Ba x Sr 1-x TiO 3 Thin Films
- 2006Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide filmscitations
- 2005Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Filmscitations
- 2005Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and watercitations
Places of action
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article
Atomic layer deposited lithium aluminum oxide
Abstract
<p>Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (LixAlyOz) thin films. In addition to LiB electrolyte applications, LixAlyOz is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The LixAlyOz films were deposited employing trimethylaluminum-O-3 and lithium tert-butoxide-H2O for Al2O3 and Li2O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al2O3 and Li2O/LiOH, all the studied ALD LixAlyOz films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic beta-LiAlO2 phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers. (C) 2014 American Vacuum Society.</p>