| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Benner, Frank
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (1/1 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Atomic layer deposited high-κ nanolaminates for silicon surface passivation
Abstract
<p>Nanolaminates comprising of TiO<sub>2</sub> or HfO<sub>2</sub> sublayers within an Al<sub>2</sub>O<sub>3</sub> matrix are grown with atomic layer deposition. These nanolaminates provide an improved silicon surface passivation compared to conventional Al<sub>2</sub>O<sub>3</sub> films. The physical properties of the nanolaminates can be described with a dynamic growth model that considers initial and steady-state growth rates for the involved metal oxides. This model links the cycle ratios of the different atomic layer deposition precursors to the thickness and the material concentrations of the nanolaminate, which are determined by means of spectroscopic ellipsometry. Effective carrier lifetime measurements show that Al<sub>2</sub>O <sub>3</sub>-TiO<sub>2</sub> nanolaminates achieve values of up to 6.0 ms at a TiO<sub>2</sub> concentration of 0.2%. In Al<sub>2</sub>O<sub>3</sub>-HfO <sub>2</sub> nanolaminates, a maximum effective carrier lifetime of 5.5 ms is reached at 7% HfO<sub>2</sub>. Electrical measurements show that the TiO <sub>2</sub> incorporation causes strong hysteresis effects, which are linked to the trapping of negative charges and result in an enhanced field effect passivation. For the Al<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub> nanolaminates, the capacitance data clearly show a very low density of interface traps (below 5·10<sup>10</sup>eV<sup>-1</sup>·cm<sup>-2</sup>) and a reduction of the fixed charge density with increasing HfO<sub>2</sub> concentration. Due to the low number of recombination centers near the surface, the reduced field effect passivation only had a minor impact on the effective carrier lifetime.</p>