| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tuomisto, Filip
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (44/44 displayed)
- 2024Suppression of helium migration in arc-melted and 3D-printed CoCrFeMnNi high entropy alloycitations
- 2024Suppression of helium migration in arc-melted and 3D-printed CoCrFeMnNi high entropy alloycitations
- 2024Solubility of Hydrogen in a WMoTaNbV High-Entropy Alloycitations
- 2023Hydrogen isotope exchange experiments in high entropy alloy WMoTaNbVcitations
- 2022Irradiation Damage Independent Deuterium Retention in WMoTaNbVcitations
- 2021Properties of HPT-Processed Large Bulks of p-Type Skutterudite DD0.7Fe3CoSb12 with ZT > 1.3citations
- 2021Identification of Point Defects in Multielement Compounds and Alloys with Positron Annihilation Spectroscopycitations
- 2020Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloyscitations
- 2020Ti-Sr antisitecitations
- 2020Ti-Sr antisite : An abundant point defect in SrTiO3citations
- 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopycitations
- 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopycitations
- 2018Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin filmscitations
- 2018Hydrogen-induced strain localisation in oxygen-free copper in the initial stage of plastic deformationcitations
- 2017Detector resolution in positron annihilation Doppler broadening experimentscitations
- 2017Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samplescitations
- 2017Effects of grain size and deformation temperature on hydrogen-enhanced vacancy formation in Ni alloyscitations
- 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductorscitations
- 2016Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germaniumcitations
- 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspectscitations
- 2015Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C-60citations
- 2015Role of excessive vacancies in transgranular stress corrosion cracking of pure coppercitations
- 2015Advanced techniques for characterization of ion beam modified materialscitations
- 2014Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloyscitations
- 2014Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALDcitations
- 2013Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloyscitations
- 2012Matter-positronium interactioncitations
- 2012Low energy electron beam induced vacancy activation in GaNcitations
- 2012Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorptioncitations
- 2012Point defect evolution in low-temperature MOCVD growth of InNcitations
- 2012Interplay of native point defects with ZnO Schottky barriers and dopingcitations
- 2011Self-compensation in semiconductorscitations
- 2010Papers presented at the 2009 E-MRS Fall Meeting, Symposium H
- 2010Effect of hydrogen on plastic strain localization in single crystals of austenitic stainless steelcitations
- 2010Vacancy defects in bulk ammonothermal GaN crystalscitations
- 2009Effect of Hydrogen on Plastic Strain Localization in Single Crystals of Nickel and Austenitic Stainless Steel
- 2009Native vacancy defects in Zn1-x(Mn,Co)(x)GeAs2 studied with positron annihilation spectroscopycitations
- 2009Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layerscitations
- 2008Evidence of PPII-like helical conformation and glass transition in a self-assembled solid-state polypeptide-surfactant complexcitations
- 2007Hierarchical porosity in self-assemhled polymerscitations
- 2007Interplay of Ga vacancies, C impurities and yellow luminescence in GaNcitations
- 2007Hierarchical porosity in self-assemhled polymers:Post-modification of block copolymer-phenolic resin complexes hy pyrolysis allows the control of micro- and mesoporositycitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor depositioncitations
Places of action
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article
Interplay of native point defects with ZnO Schottky barriers and doping
Abstract
A combination of depth-resolved electronic and structural techniques reveals that native point defects can play a major role in ZnO Schottky barrier formation and charged carrier doping. Previous work ignored these lattice defects at metal–ZnO interfaces due to relatively low point defect densities in the bulk. At higher densities, however, they may account for the wide range of Schottky barrier results in the literature. Similarly, efforts to control doping type and density usually treat native defects as passive, compensating donors or acceptors. Recent advances provide a deeper understanding of the interplay between native point defects and electronic properties at ZnO surfaces, interfaces, and epitaxial films. Key to ZnO Schottky barrier formation is a massive redistribution of native point defects near its surfaces and interfaces. It is now possible to measure the energies, densities, and in many cases the type of point defects below the semiconductor-free surface and its metal interface with nanoscale precision. Depth-resolved cathodoluminescence spectroscopy of deep level emissions calibrated with electrical techniques show that native point defects can (1) increase by orders of magnitude in densities within tens of nanometers of the semiconductor surface, (2) alter free carrier concentrations and band profiles within the surface space charge region, (3) dominate Schottky barrier formation for metal contacts to ZnO, and (4) play an active role in semiconductor doping. The authors address these issues by clearly identifying transition energies of leading native point defects and defect complexes in ZnO and the effects of different annealing methods on their spatial distributions on a nanoscale. These results reveal the interplay between ZnO electronic defects, dopants, polarity, and surface nanostructure, highlighting new ways to control ZnO Schottky barriers and doping. ; Peer reviewed