| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lundin, Daniel
Linköping University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2025Epitaxial growth of TiZrNbTaN films without external heating by high-power impulse magnetron sputteringcitations
- 2024Plasma electron characterization in electron chemical vapor depositioncitations
- 2023On selective ion acceleration in bipolar HiPIMS: A case study of (Al,Cr)2O3 film growthcitations
- 2023Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electronscitations
- 2023Corundum-structured AlCrNbTi oxide film grown using high-energy early-arriving ion irradiation in high-power impulse magnetron sputteringcitations
- 2023HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substratecitations
- 2021Modeling of high power impulse magnetron sputtering discharges with graphite targetcitations
- 2021Low temperature growth of stress-free single phase alpha-W films using HiPIMS with synchronized pulsed substrate biascitations
- 2021Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) Filmscitations
- 2020Chemical vapor deposition of metallic films using plasma electrons as reducing agentscitations
- 2020Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on coppercitations
- 2019Tuning high power impulse magnetron sputtering discharge and substrate bias conditions to reduce the intrinsic stress of TiN thin filmscitations
- 2018Low temperature (T-s/T-m < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate biascitations
- 2018Influence of backscattered neutrals on the grain size of magnetron-sputtered TaN thin filmscitations
- 2017Benefits of energetic ion bombardment for tailoring stress and microstructural evolution during growth of Cu thin filmscitations
- 2017Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS processcitations
- 2014Anti-vibration Engineering in Internal Turning Using a Carbon Nanocomposite Damping Coating Produced by PECVD Processcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012An introduction to thin film processing using high-power impulse magnetron sputteringcitations
- 2012A novel high-power pulse PECVD methodcitations
- 2012High power impulse magnetron sputtering dischargecitations
- 2010The HiPIMS Process
- 2008Plasma properties in high power impulse magnetron sputtering
Places of action
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article
Influence of ionization degree on film properties when using high power impulse magnetron sputtering
Abstract
<p>Chromium thin films are deposited by combining direct current magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) on a single cathode in an industrial deposition system. While maintaining a constant deposition rate and unchanged metal ion energy distribution function, the fraction of the total power supplied by either deposition technique is altered, and thereby also the metal ion to metal neutral ratio of the deposition flux. It is observed that the required total average power needed to be proportionally increased as the HiPIMS fraction is increased to be able to keep a constant deposition rate. The influence on microstructure, electrical, and electrochemical properties of the films is investigated and shows improvements with the use of HiPIMS. However, considerable influence of the studied properties occurs already when only some 40 of the total power is supplied by the HiPIMS technique. Further increase of the HiPIMS power fraction results in comparatively minor influence of the studied properties yet significant deposition rate efficiency reduction. The results show that the degree of ionization can be controlled separately, and that the advantages associated with using HiPIMS can be obtained while much of the deposition rate reduction, often reported for HiPIMS, can be avoided.</p>