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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Liliental-Weber, Z.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2013Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition rangecitations
- 2013Microstructure of Mg doped GaNAs alloyscitations
- 2012Wurtzite-to amorphous-to cubic phase transition of GaN1-x Asx alloys with increasing As contentcitations
- 2012Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applicationscitations
- 2011Structural defects and cathodoluminescence of InxGa1-xN layerscitations
- 2011GaNAs alloys over the whole composition range grown on crystalline and amorphous substratescitations
- 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVcitations
- 2010Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen productioncitations
- 2010Amorphous GaN1-xAsx alloys for multi-junction solar cells
- 2010Low gap amorphous GaN1-x Asx alloys grown on glass substratecitations
- 2009Structural perfection of InGaN layers and its relation to photoluminescencecitations
- 2009Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition rangecitations
- 2009Electrical and electrothermal transport in InNcitations
- 2009Spontaneous stratification of InGaN layers and its influence on optical propertiescitations
- 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloyscitations
- 2008Low-temperature grown compositionally graded InGaN filmscitations
- 2006Structure and electronic properties of InN and In-rich group III-nitride alloyscitations
- 2005Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxycitations
- 2005Transmission electron microscopy study of nonpolar a-plane GaN grown by pendeo-epitaxy on (11(2)under-bar0) 4H-SiC
- 2004Characterization and manipulation of exposed Ge nanocrystals
- 2003Diluted magnetic semiconductors formed by ion implantation and pulsed-laser meltingcitations
- 2003Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates
- 2003Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAscitations
- 2003Microstructure of nonpolar a-plane GaN grown on (1120) 4H-SiC investigated by TEM.
- 2002Transparent ZnO-based ohmic contact to p-GaNcitations
Places of action
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article
Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production
Abstract
The authors have succeeded in growing GaN<sub>1-x</sub> As<sub>x</sub> alloys over a large composition range (02 flux at low (as low as 100 °C) growth temperatures, which is much below the normal GaN growth temperature range. Using x-ray and transmission electron microscopy, they found that the GaNAs alloys with high As content x > 0.17 are amorphous. Optical absorption measurements together with x-ray absorption and emission spectroscopy results reveal a continuous gradual decrease in band gap from ∼3.4 to 1-x As<sub>x</sub> alloys follows the prediction of the band anticrossing model (BAC). However, our measured band gap of amorphous GaN <sub>1-x</sub> As<sub>x</sub> with 0.31-x As<sub>x</sub> alloys have short-range ordering that resembles random crystalline GaN<sub>1-x</sub> As<sub>x</sub> alloys. They have demonstrated the possibility of the growth of amorphous GaN<sub>1-x</sub> As<sub>x</sub> layers with variable As content on glass substrates. © 2010 American Vacuum Society.