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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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Hawkridge, M.
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2011Structural defects and cathodoluminescence of InxGa1-xN layerscitations
- 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVcitations
- 2010Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen productioncitations
- 2009Structural perfection of InGaN layers and its relation to photoluminescencecitations
- 2009Spontaneous stratification of InGaN layers and its influence on optical propertiescitations
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article
Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production
Abstract
The authors have succeeded in growing GaN<sub>1-x</sub> As<sub>x</sub> alloys over a large composition range (02 flux at low (as low as 100 °C) growth temperatures, which is much below the normal GaN growth temperature range. Using x-ray and transmission electron microscopy, they found that the GaNAs alloys with high As content x > 0.17 are amorphous. Optical absorption measurements together with x-ray absorption and emission spectroscopy results reveal a continuous gradual decrease in band gap from ∼3.4 to 1-x As<sub>x</sub> alloys follows the prediction of the band anticrossing model (BAC). However, our measured band gap of amorphous GaN <sub>1-x</sub> As<sub>x</sub> with 0.31-x As<sub>x</sub> alloys have short-range ordering that resembles random crystalline GaN<sub>1-x</sub> As<sub>x</sub> alloys. They have demonstrated the possibility of the growth of amorphous GaN<sub>1-x</sub> As<sub>x</sub> layers with variable As content on glass substrates. © 2010 American Vacuum Society.