| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giubertoni, Damiano
Fondazione Bruno Kessler
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (31/31 displayed)
- 2024Enhancing the Deposition Rate and Uniformity in 3D Gold Microelectrode Arrays via Ultrasonic-Enhanced Template-Assisted Electrodeposition
- 2023Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography
- 2023Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Latticecitations
- 2023Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Latticecitations
- 2023Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritronscitations
- 2022Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoidscitations
- 2022Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoidscitations
- 2018The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ionscitations
- 2014GIXRF characterization of thin Ge1-xSnx films
- 2014Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Development of nano-topography during SIMS characterization of Ge1-xSnx alloy
- 2014Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls
- 2013Dynamic SIMS Characterization of Ge1-xSnx alloy
- 2012Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealingcitations
- 2012Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layerscitations
- 2010Non-melting annealing of silicon by CO2 lasercitations
- 2010Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in siliconcitations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing
- 2009Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment
- 2008Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealingcitations
- 2008P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activationcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2006Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and Fcitations
- 2004The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF2citations
- 2003Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures
Places of action
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article
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
Abstract
The use of nonequilibrium annealing approaches can produce very high levels of arsenic electrical activation in Si. However, subsequent thermal treatments between 500 and 800 °C easily deactivate the dopant to a level one order of magnitude below the solid solubility. In this work, the authors study the deactivation of laser annealed (LA) ultrashallow arsenic distributions in silicon using Hall effect measurements, extended x-ray absorption fine structure spectroscopy, and secondary ion mass spectrometry. Single crystal Si (100) wafers implanted with As ions at 2 keV energy and different doses were activated with a millisecond LA at 1300 °C using a scanning diode laser annealing system under nonmelt conditions. The samples were then thermally treated in a furnace at 300–900 °C in a N2 atmosphere for 10 min. Electrical deactivation has been observed for all the implanted doses but for the lowest one. In particular, it was observed that the higher the As dose the easier the deactivation, in particular, after the 700 °C post-LA treatment. At 900 °C, in-depth diffusion and a resulting reactivation has been observed for samples implanted with 1E15 and 3E15 cm−2.