| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kukli, Kaupo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (35/35 displayed)
- 2024Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Filmscitations
- 2023Coatings Made by Atomic Layer Deposition for the Protection of Materials from Atomic Oxygen in Space
- 2022Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Depositioncitations
- 2022Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticlescitations
- 2022Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Depositioncitations
- 2022Structure and electrical behavior of hafnium-praseodymium oxide thin films Grown by atomic layer depositioncitations
- 2021Optical and mechanical properties of nanolaminates of zirconium and hafnium oxides grown by atomic layer depositioncitations
- 2020Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer depositioncitations
- 2020Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Filmscitations
- 2020Behavior of nanocomposite consisting of manganese ferrite particles and atomic layer deposited bismuth oxide chloride filmcitations
- 2019Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Filmscitations
- 2018Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxidescitations
- 2018Atomic Layer Deposition of Zirconium Dioxide from Zirconium Tetraiodide and Ozonecitations
- 2018Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Filmscitations
- 2018Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminatescitations
- 2018Atomic layer deposition and properties of ZrO2/Fe2O3 thin filmscitations
- 2017Luminescence properties of $mathrm{Er^{3+}}$ doped zirconia thin films and $mathrm{ZrO_2/Er_2O_3}$ nanolaminates grown by atomic layer depositioncitations
- 2016Atomic layer deposition of aluminum oxide on modified steel substratescitations
- 2016Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layerscitations
- 2015Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozonecitations
- 2015Mechanical properties of aluminum, zirconium, hafnium and tantalum oxides and their nanolaminates grown by atomic layer depositioncitations
- 2014Atomic layer deposition of Zr<scp>O</scp><sub>2</sub> for graphene‐based multilayer structures: <i>In situ</i> and <i>ex situ</i> characterization of growth processcitations
- 2014Modification of Hematite Electronic Properties with Trimethyl Aluminum to Enhance the Efficiency of Photoelectrodescitations
- 2014Holmium and titanium oxide nanolaminates by atomic layer depositioncitations
- 2012Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Filmscitations
- 2011Crystal structures and thermal properties of some rare earth alkoxides with tertiary alcoholscitations
- 2010High temperature atomic layer deposition of Ruthenium from N,N-dimethyl-1-ruthenocenylethylaminecitations
- 2010Atomic layer deposition and characterization of zirconium oxide-erbium oxide nanolaminatescitations
- 2009Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursorscitations
- 2009Atomic layer deposition of high-k oxides of the group 4 metals for memory applicationscitations
- 2009Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer depositioncitations
- 2009Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectricscitations
- 2008Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devicescitations
- 2006Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide filmscitations
- 2005Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and watercitations
Places of action
| Organizations | Location | People |
|---|
article
Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Abstract
ZrO2 and reference HfO2 films grown by atomic layer deposition from metal cyclopentadienyls and ozone as precursors to thicknesses ranging from 3.6 to 13.1 nm on etched silicon showed electrical characteristics adequate to high-k dielectrics. The best results in terms of low interface state densities were obtained when (CpMe)(2)ZrMe2 precursor was used, with Cp denoting the cyclopentadienyl group (C5H5), and Me the methyl group (CH3). The ZrO2 films grown from (CpMe)(2)Zr(OMe)Me possessed nearly an order of magnitude higher trap state densities. Similar dependence on the precursor chemistry was observed upon recording the flatband voltage time transients. The flatband voltage transients, originating from phonon-assisted tunneling between localized states at oxide silicon interface, were the lowest in HfO2 films grown from (CpMe)(2)Hf(OMe)Me. The leakage current densities were also lower in the HfO2 films, compared to ZrO2. On the other hand, interfacial trap state densities in HfO2 based capacitors remained higher than those measured in the case of ZrO2 films. Process-dependent qualities of the capacitors have been described. At the same time, the current conduction mechanisms in all films were essentially bulk driven, not affected noticeably by the interfacial barriers. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3025865]