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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Castán, Helena
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Topics
Publications (8/8 displayed)
- 2022Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Depositioncitations
- 2022Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Depositioncitations
- 2021Thermoelectrical Characterization of Piezoelectric Diaphragms: Towards a Better Understanding of Ferroelectrics for Future Memory Applications
- 2018Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxidescitations
- 2016Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applicationscitations
- 2012Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantationcitations
- 2009Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursorscitations
- 2009Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectricscitations
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article
Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
Abstract
Ionizing radiation effects on the electrical properties of HfO2, Gd2O3, and HfO2/SiO2 based metal-oxide-semiconductor (MOS) capacitors have been studied. High-k dielectrics grown by atomic layer deposition and high-pressure Sputtering were exposed to photon radiation (18 MeV photons). Capacitance-voltage curves, deep-level transient spectroscopy, conductance and flat-band voltage transients, and current-voltage techniques were used to characterize the samples. An increment in bulk dielectric trap densities has been observed when the samples were exposed to the ionizing radiation. These traps give rise to a flat-band voltage displacement, the extent of which depends on the gate dielectric used. High-k/silicon interface quality becomes worse after irradiation. An increment in the gate leakage current was also observed when irradiating the samples. Disorder-induced gap state density inside the insulator increases in the case of Gd2O3 MOS based samples, which seems to be the most affected by ionizing radiation. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3021040]