| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kirkby, Karen Reeson
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2013Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions.citations
- 2013Integrated Ion Beam Analysis (IBA) in Gunshot Residue (GSR) characterisationcitations
- 2012Determination of the deposition order of overlapping latent fingerprints and inks using secondary ion mass spectrometry.citations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS)
- 2009Trace element profiling of gunshot residues by PIXE and SEM-EDScitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing
- 2008RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatmentcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
- 2006Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2005Evaluation of BBr2 + and B+ + Br + implants in silicon
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantationcitations
- 2005Comparison of elemental boron and boron halide implants into siliconcitations
- 2002Effect of implant conditions on the optical and structural properties of β-FeSi2
- 2001Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ionscitations
- 2001Electroluminescence of β-FeSi2 light emitting devices
- 2000Light-emitting diodes fabricated in silicon/iron disilicide
Places of action
| Organizations | Location | People |
|---|
article
Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
Abstract
P -type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-energy boron implantation. However, for future technology nodes, issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). An understanding of the effect of the buried Si SiO2 interface on defect evolution, electrical activation, and diffusion is needed in order to optimize the preamorphization technique. In the present study, boron has been implanted in germanium preamorphized silicon and SOI wafers with different preamorphizing implant conditions. Subsequent to implantation an isothermal annealing study of the samples was carried out. Electrical and structural properties were measured by Hall-effect and secondary-ion-mass spectroscopy techniques. The results show a variety of interesting effects. For the case where the Ge preamorphization end-of-range defects are close to the buried oxide interface, there is less dopant deactivation and less transient-enhanced diffusion, due to a lower interstitial gradient towards the surface.