| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mclaughlin, James
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (27/27 displayed)
- 2024Machine Learning-Based Structural Health Monitoring Technique for Crack Detection and Localisation Using Bluetooth Strain Gauge Sensor Networkcitations
- 2018Nanostructured nitrogen doped diamond for the detection of toxic metal ions
- 2018Nanostructured nitrogen doped diamond for the detection of toxic metal ions
- 2017Novel π-conjugated iron oxide/reduced graphene oxide nanocomposites for high performance electrochemical supercapacitorscitations
- 2017Development of an embedded thin-film strain-gauge-based SHM network into 3D-woven composite structure for wind turbine bladescitations
- 2017Functional diamond like carbon (DLC) coatings on polymer for improved gas barrier performancecitations
- 2017Development of an Embedded Thin-film Strain-sensor-based SHM for Composite Tidal Turbine Blades
- 2011Structural and surface energy analysis of nitrogenated ta-C filmscitations
- 2010Effect of thin aluminum interlayer on growth and microstructure of carbon nanotubescitations
- 2010Microstructure and field emission characteristics of ZnO nanoneedles grown by physical vapor depositioncitations
- 2009Electrical and Raman spectroscopic studies of vertically aligned multi-walled carbon nanotubes.citations
- 2009Substrate effects on the microstructure of hydrogenated amorphous carbon filmscitations
- 2009Glycine Adsorption onto DLC and N-DLC Thin Films Studied by XPS and AFMcitations
- 2007Intrinsic mechanical properties of ultra-thin amorphous carbon layerscitations
- 2006Measuring the thickness of ultra-thin diamond-like carbon filmscitations
- 2005Electronic properties of a-CNx thin films : An x-ray-absorption and photoemission spectroscopy studycitations
- 2005Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin filmscitations
- 2005Structural investigation and gas barrier performance of diamond-like carbon based films on polymer substratescitations
- 2005Spectroscopic analysis of a-C and a-CNx films prepared by ultrafast high repetition rate pulsed laser depositioncitations
- 2004Platelet adhesion on silicon modified hydrogenated amorphous carbon films.citations
- 2004Macrophage responses to vascular stent coatings.
- 2004Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon filmscitations
- 2001Electrical characteristics of nitrogen incorporated hydrogenated amorphous carboncitations
- 2001Intrinsic stress measured on ultra-thin amorphous carbon films deposited on AFM cantileverscitations
- 2001The insulating properties of a-C:H on silicon and metal substratescitations
- 2000Nitrogen doping of amorphous DLC films by rf plasma dissociated nitrogen atom surface bombardment in a vacuumcitations
- 2000The effects of Si incorporation on the microstructure and nanomechanical properties of DLC thin filmscitations
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article
Electrical characteristics of nitrogen incorporated hydrogenated amorphous carbon
Abstract
Nitrogen incorporation into hydrogenated amorphous carbon (a-C:H) films has recently attracted a wide range of interest due to its contribution in reducing film stress and improving field emission properties. In this work we characterize the electrical properties of nitrogen containing a-C:H films. The a-C:H films were prepared by plasma enhanced chemical vapor deposition in an acetylene (C2H2) environment with a range of bias voltages. Nitrogen incorporation was achieved by exposing the films to an atomic nitrogen flux from a rf plasma with up to 40% dissociation and atomic nitrogen fluxes of up to 0.85×1018 atoms s−1. Raman results indicate that the doping process is accompanied by some structural changes seen by the G-band peak shifts. X-ray photoelectron spectroscopy spectra suggest that the dopant levels exceed those previously reported. Capacitance probe and I–V techniques showed a decrease in contact potential difference and density of states for doped films, indicating a rise in the Fermi level.