Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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693.932 PEOPLE
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Ruzic, David N.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (5/5 displayed)

  • 2020Study of a linear surface wave plasma source for tin removal in an extreme ultraviolet source12citations
  • 2005A model for ion-bombardment induced erosion enhancement with target temperature in liquid lithium9citations
  • 2002Enhancement of aluminum oxide physical vapor deposition with a secondary plasma24citations
  • 2001Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV40citations
  • 2001Measurements and modeling of D, He and Li sputtering of liquid lithium40citations

Places of action

Chart of shared publication
Jacobson, Daniel
1 / 1 shared
Panici, Gianluca
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Jain, Arihant
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Coventry, M. D.
1 / 1 shared
Alman, D. A.
1 / 1 shared
Li, Ning
1 / 16 shared
Ranjan, R.
1 / 3 shared
Hendricks, M. R.
2 / 3 shared
Chart of publication period
2020
2005
2002
2001

Co-Authors (by relevance)

  • Jacobson, Daniel
  • Panici, Gianluca
  • Jain, Arihant
  • Coventry, M. D.
  • Alman, D. A.
  • Li, Ning
  • Ranjan, R.
  • Hendricks, M. R.
OrganizationsLocationPeople

article

Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV

  • Ranjan, R.
  • Ruzic, David N.
  • Hendricks, M. R.
Abstract

<p>The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.</p>

Topics
  • impedance spectroscopy
  • aluminium
  • physical vapor deposition
  • Nitrogen
  • nitride
  • copper
  • titanium
  • tin