| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mori, Takao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2024Thermoelectric performance of n-type Bi2S3-alloyed Bi2Te2.7Se0.3
- 2024Outstanding Room‐Temperature Thermoelectric Performance of n‐type Mg<sub>3</sub>Bi<sub>2</sub>‐Based Compounds Through Synergistically Combined Band Engineering Approachescitations
- 2024Enhanced thermoelectric performance of p-type BiSbTe through incorporation of magnetic CrSbcitations
- 2024Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge Statescitations
- 2024PbSe Quantum Dot Superlattice Thin Films for Thermoelectric Applicationscitations
- 2024PbSe Quantum Dot Superlattice Thin Films for Thermoelectric Applicationscitations
- 2024Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin filmscitations
- 2023Room-Temperature Thermoelectric Performance of n‑Type Multiphase Pseudobinary Bi 2 Te 3 –Bi 2 S 3 Compounds: Synergic Effects of Phonon Scattering and Energy Filteringcitations
- 2023Investigation of Mn Single and Co-Doping in Thermoelectric CoSb 3 -Skutterudite: A Way Toward a Beneficial Composite Effectcitations
- 2023Effect of the annealing treatment on structural and transport properties of thermoelectric Smy(FexNi1-x)4Sb12thin filmscitations
- 2023Enhanced High-Temperature Thermoelectric Performance of Yb 4 Sb 3 via Ce/Bi Co-doping and Metallic Contact Deposition for Device Integrationcitations
- 2023Rhombohedral Boron Monosulfide as a p-Type Semiconductorcitations
- 2023Surface chemical states and structures of epitaxial Mg<sub>2</sub>Sn thermoelectric thin filmscitations
- 2022Feasibility of high performance in <i>p</i>‐type Ge<sub>1−</sub><i><sub>x</sub></i>Bi<i><sub>x</sub></i>Te materials for thermoelectric modulescitations
- 2022A hierarchical design for thermoelectric hybrid materials: Bi2Te3 particles covered by partial Au skins enhance thermoelectric performance in sticky thermoelectric materialscitations
- 2022Thermoelectric properties of Cu‐Doped Heusler compound Fe<sub>2‐<i>x</i></sub>Cu<sub><i>x</i></sub>VAlcitations
- 2022Heterometallic Benzenehexathiolato Coordination Nanosheets: Periodic Structure Improves Crystallinity and Electrical Conductivitycitations
- 2022New record high thermoelectric ZT of delafossite-based CuCrO<SUB>2</SUB> thin films obtained by simultaneously reducing electrical resistivity and thermal conductivity via heavy doping with controlled residual stresscitations
- 2022Heterometallic Benzenehexathiolato Coordination Nanosheets: Periodic Structure Improves Crystallinity and Electrical Conductivity.
- 2022Facile Fabrication of N-Type Flexible CoSb3-xTex Skutterudite/PEDOT:PSS Hybrid Thermoelectric Filmscitations
- 2022Improvement of Thermoelectric Properties via Texturation Using a Magnetic Slip Casting Process-The Illustrative Case of CrSi2citations
- 2021Transport properties of a molybdenum antimonide-telluride with dispersed NiSb nanoparticlescitations
- 2021Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb2S3 Prepared by Electrophoretic Depositioncitations
- 2021Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb 2 S 3 Prepared by Electrophoretic Depositioncitations
- 2021Fabrication and Evaluation of Low-Cost CrSi2 Thermoelectric Legscitations
- 2021Fabrication and Evaluation of Low-Cost CrSi2 Thermoelectric Legscitations
- 2021Synthesis of novel hexamolybdenum cluster-functionalized copper hydroxide nanocomposites and its catalytic activity for organic molecule degradationcitations
- 2020Improvement in the thermoelectric properties of porous networked Al-doped ZnO nanostructured materials synthesized via an alternative interfacial reaction and low-pressure SPS processingcitations
- 2020Influence of Stoichiometry and Aging at Operating Temperature on Thermoelectric Higher Manganese Silicidescitations
- 2020New Synthesis Route for Complex Borides; Rapid Synthesis of Thermoelectric Yttrium Aluminoboride via Liquid-Phase Assisted Reactive Spark Plasma Sinteringcitations
- 2020Screening of transition (Y, Zr, Hf, V, Nb, Mo, and Ru) and rare-earth (La and Pr) elements as potential effective dopants for thermoelectric GeTe – an experimental and theoretical appraisalcitations
- 2019Development of nanoscale thermocouple probes for local thermal measurementscitations
- 2018Visualizing nanoscale heat pathwayscitations
- 2018Enhanced thermoelectric performance of Bi-Sb-Te/Sb2O3 nanocomposites by energy filtering effectcitations
- 2017Sb Doping of Metallic CuCr2S4 as a Route to Highly Improved Thermoelectric Propertiescitations
- 2017Nano-micro-porous skutterudites with 100% enhancement in ZT for high performance thermoelectricitycitations
- 2017Thermoelectric properties of boron carbide/HfB2 compositescitations
- 2015Nanoscale characterization of the thermal interface resistance of a heat-sink composite material by in situ TEMcitations
- 2003Direct pyrolysis method for superconducting crystalline MgB2 nanowirescitations
Places of action
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article
Feasibility of high performance in <i>p</i>‐type Ge<sub>1−</sub><i><sub>x</sub></i>Bi<i><sub>x</sub></i>Te materials for thermoelectric modules
Abstract
<jats:title>Abstract</jats:title><jats:p>GeTe is a promising candidate for the fabrication of high‐temperature segments for <jats:italic>p</jats:italic>‐type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 10<jats:sup>21</jats:sup> cm<jats:sup>−3</jats:sup>), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge<jats:sub>1−</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Bi<jats:italic><jats:sub>x</jats:sub></jats:italic>Te (<jats:italic>x</jats:italic> = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit <jats:italic>ZT</jats:italic> = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge<jats:sub>1−</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Bi<jats:italic><jats:sub>x</jats:sub></jats:italic>Te (<jats:italic>x</jats:italic> = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe<jats:sub>2</jats:sub> transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures.</jats:p>