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| Naji, M. |
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| Ertürk, Emre |
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| Azevedo, Nuno Monteiro |
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Ding, Hui
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Publications (6/6 displayed)
- 2025Hierarchy of defects in near-Σ5 tilt grain boundaries in copper studied by length-scale bridging electron microscopy
- 2022Evidence for antipolar displacements in NaNbO3 thin filmscitations
- 2021Domain morphology of newly designed lead-free antiferroelectric NaNbO3-SrSnO3 ceramicscitations
- 2021Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfacescitations
- 2020Electric-field-induced antiferroelectric to ferroelectric phase transition in polycrystalline NaNbO3citations
- 2020Direct 3D Printing of Graphene Using Capillary Suspensionscitations
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article
Domain morphology of newly designed lead-free antiferroelectric NaNbO3-SrSnO3 ceramics
Abstract
<p>Reversible antiferroelectric-ferroelectric phase transitions were recently observed in a series of SrSnO<sub>3</sub>-modified NaNbO<sub>3</sub> lead-free antiferroelectric materials, exhibiting well-defined double polarization hysteresis loops at ambient conditions. Here, transmission electron microscopy was employed to investigate the crystallography and domain configuration of this newly designed system via electron diffraction and centered dark-field imaging. It was confirmed that antiferroelectricity is maintained in all compositions, manifested by the characteristic ¼ superlattice reflections in the electron-diffraction patterns. By investigating the antiferroelectric domains and domain boundaries in NaNbO<sub>3</sub>, we demonstrate that antiphase boundaries are present and their irregular periodicity is responsible for the streaking features along the ¼ superlattice reflections in the electron-diffraction patterns. The signature domain blocks observed in pure NaNbO<sub>3</sub> are maintained in the SrSnO<sub>3</sub>-modified ceramics, but disappear when the amount of SrSnO<sub>3</sub> reaches 7 mol.%. In particular, a well-defined and distinct domain configuration is observed in the NaNbO<sub>3</sub> sample modified with 5 mol.% SrSnO<sub>3</sub>, which presents a parallelogram domain morphology.</p>