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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ohji, Tatsuki
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Publications (4/4 displayed)
- 2020Remembering Joanna McKittrick
- 2004Uniformly Porous Composites with 3‐D Network Structure (UPC‐3D) for High‐Temperature Filter Applicationscitations
- 2000Enhanced Magnetization of 3 mol% Yttria‐Doped Zirconia/Barium Hexaferrite by Post‐Plastic Deformationcitations
- 2000Reaction‐Bonded and Superplastically Sinter‐Forged Silicon Nitride–Silicon Carbide Nanocompositescitations
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article
Reaction‐Bonded and Superplastically Sinter‐Forged Silicon Nitride–Silicon Carbide Nanocomposites
Abstract
<jats:p>Silicon nitride–silicon carbide (Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>–SiC) nanocomposites were fabricated by a process involving reaction bonding followed by superplastic sinter‐forging. The nanocomposites exhibited an anisotropic microstructure, in which rod‐shaped, micrometer‐sized Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> grains tended to align with their long axes along the material‐flow direction. SiC particles, typically measuring several hundred nanometers, were located at the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> grain boundaries, and nanosized particles were dispersed inside the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> grains. A high bending strength of 1246 ± 119 MPa, as well as a high fracture toughness of 8.2 ± 0.9 MPa·m<jats:sup>1/2</jats:sup>, was achieved when a stress was applied along the grain‐alignment direction.</jats:p>