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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Aryanto, Didik
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2024The effects of copper on the mechanical properties of Ti-10Mo alloy prepared by powder metallurgy methodcitations
- 2023Synthesis, Characterization, and Electrochemical Performance of Reduced Graphene Oxide-Metal (Cu,Zn)-Oxide Materials
- 2020The Effect of Mechanochemical on The Formation of Calcium Titanate (CaTiO<sub>3</sub>) Prepared by High Energy Millingcitations
- 2019Synthesis and Characterization of Ni-doped ZnO Thin Films Grown by Sol-Gel Spin Coatingcitations
- 2014Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD
- 2013The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy
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article
Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD
Abstract
The single layer In0.5Ga0.5As quantum dots (QDs) were grown on a thin InxGa1-xAs underlying layer by metal-organic chemical vapor deposition (MOCVD) via Stranski-Krastanow growth mode. The effect of different indium composition in the InxGa1-xAs underlying layer was investigated using atomic force microscopy (AFM). AFM images show that the QDs structures were formed on the surface. The dots formation on the surface changes with different composition of InxGa1-xAs underlying layer. Increasing indium composition in the underlying layer resulted to formation of higher density and smaller size dots. Several large dots were also formed on the surface. Growing of underlying layer reduces the lattice mismatch between In0.5Ga0.5As and GaAs, and decreases the critical thickness of the dots. This strongly influences the dots nucleation on the surface. Growth of quantum dots using underlying layer is one way to modify dot formation in order to achieve uniform QDs of right size and high density, which are essential for QDs device applications.