| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Buttay, Cyril
Claude Bernard University Lyon 1
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2022Design of a test package for high voltage SiC diodes
- 2022Optical Detection of Partial Discharges Under Fast Rising Square Voltages in Dielectric Liquidscitations
- 2017Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductorscitations
- 2017High temperature ageing of microelectronics assemblies with SAC solder jointscitations
- 2017Robustness of SiC MOSFET under avalanche conditionscitations
- 2016Sintered-Silver Bonding of High-Temperature Piezoelectric Ceramic Sensorscitations
- 2015Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Testcitations
- 2014Design and Manufacturing of a Double-Side Cooled, SiC based, High Temperature Inverter Leg
- 2013Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloycitations
- 2013High Temperature Operation of SiC Converters
- 2013Full densification of molybdenum powders and multilayer materials obtained by Spark Plasma Sintering
- 2013Die attach using silver sintering. Practical implementation and analysiscitations
- 2012Full densification of Molybdenum powders using Spark Plasma Sinteringcitations
- 2012Elaboration of Architectured Materials by Spark Plasma Sinteringcitations
- 2012Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applicationscitations
- 20123-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules
- 2011Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
- 2011Elaboration of Architectured Materials by Spark Plasma Sinteringcitations
- 2011Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substratescitations
Places of action
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conferencepaper
Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors
Abstract
—Wide bandgap semiconductors enable high voltage (10 kV and more) switches. As a consequence, new packaging solutions are required to prepare the ground for such devices. The metallized ceramic substrate is a well-known and established technology for voltages up to 3.3kV, but it exhibits some weaknesses at higher voltages: due to its manufacturing process, the profile of the metallization is sharp and induces a reinforcement of the electric field at the " triple point " area (where the ceramic, the conductor and the encapsulating material meet), which can lead to Partial Discharges (PD), eventually causing a failure of the module. In this paper, we present a new substrate structure, where the triple point is moved away to an area where the electric field is lower. In this structure, the ceramic is machined to form protrusions, and round-edge metallizations are brazed on top. The design of the substrate, based on finite-elements is described, and calculations show that a 1 mm-thick AlN layer should be sufficient to withstand 10 kV. The manufacturing process of this substrate is presented. The test results demonstrate the superiority of this new solution, with a partial discharge inception voltage increased by 38 %.