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Sverdlov, Viktor
TU Wien
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2012a multi scale modeling approach to non radiative multi phonon transitions at oxide defects in mos structurescitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2009valley splitting in thin silicon films from a two band k p model
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
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article
valley splitting in thin silicon films from a two band k p model
Abstract
The unprimed valley structure in (001) silicon thin films has been analyzed within the two-band k·p model. It is shown that the two-fold degeneracy of the unprimed subbands can be lifted leading to the socalled valley splitting which is proportional to the strength of the perpendicular magnetic field. The valley splitting can be enhanced in 〈110〉 oriented point contacts, while it is suppressed in a 〈100〉 point contact. Finally, the valley splitting can be controlled and made larger than the Zeeman splitting by shear strain.This makes silicon very attractive for spintronic applications.