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Selberherr, Siegfried
TU Wien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2020Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAMcitations
- 2016Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stresscitations
- 2014Microstructural Impact on Electromigration: A TCAD Studycitations
- 2013Multiple Purpose Spin Transfer Torque Operated Devices
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2011Modeling Electromigration Lifetimes of Copper Interconnectscitations
- 2009valley splitting in thin silicon films from a two band k p model
- 2009The Effect of Microstructure on Electromigration-Induced Failure Developmentcitations
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
- 2009Analysis of Electromigration in Dual-Damascene Interconnect Structures
- 2007Electromigration Modeling for Interconnect Structures in Microelectronics
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article
valley splitting in thin silicon films from a two band k p model
Abstract
The unprimed valley structure in (001) silicon thin films has been analyzed within the two-band k·p model. It is shown that the two-fold degeneracy of the unprimed subbands can be lifted leading to the socalled valley splitting which is proportional to the strength of the perpendicular magnetic field. The valley splitting can be enhanced in 〈110〉 oriented point contacts, while it is suppressed in a 〈100〉 point contact. Finally, the valley splitting can be controlled and made larger than the Zeeman splitting by shear strain.This makes silicon very attractive for spintronic applications.