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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Teodorescu, Remus
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Computationally Efficient Machine-Learning-Based Online Battery State of Health Estimation
- 2017Short-Circuit Degradation of 10-kV 10-A SiC MOSFETcitations
- 2015Extensive EIS characterization of commercially available lithium polymer battery cell for performance modellingcitations
- 2014Reduction of DC-link Capacitor in Case of Cascade Multilevel Converters by means of Reactive Power Controlcitations
- 2014Diagnosis of Lithium-Ion Batteries State-of-Health based on Electrochemical Impedance Spectroscopy Techniquecitations
- 2014Diagnosis of Lithium-Ion Batteries State-of-Health based on Electrochemical Impedance Spectroscopy Techniquecitations
- 2012Modular Multilevel Converter Modelling, Control and Analysis under Grid Frequency Deviations
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article
Short-Circuit Degradation of 10-kV 10-A SiC MOSFET
Abstract
The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this work, the degradation during short-circuit of a 10 kV 10 A 4H-SiC MOSFET is investigated at 6 kV DC-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its life-time. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation show that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope (SEM) investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.