| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Luukka, Panja
Lappeenranta-Lahti University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Multispectral photon-counting for medical imaging and beam characterization - A project reviewcitations
- 2022Multispectral photon-counting for medical imaging and beam characterization — A project reviewcitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2021Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detectioncitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2019Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurementscitations
- 2019Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2017Advanced processing of CdTe pixel radiation detectorscitations
- 2016Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectorscitations
- 2016Processing of n(+)/p(-)/p(+) strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substratescitations
- 2014Pixel Detector Upgrade of CMS Experiment
Places of action
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article
Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurements
Abstract
We studied the impact of boundary walls and inclusions to the charge collection efficiency (CCE) of cadmium telluride (CdTe) pad detectors. By using ion beam-induced charge (IBIC) analysis, we were able to locate and classify various defects. We used 2-MeV protons that have a penetration depth of about 40 mu m in bulk CdTe. The detectors we measured had a surface area of 1 cm x 1 cm and a thickness of 1 mm. They were passivated either by using aluminum nitride (AlN) or by aluminum oxide (Al2O3) and had a mesh of titanium tungsten Schottky contacts on both anode and cathode sides. In this paper, we show the results of our measurements and analyze the potential impact of the found defects on the performance of CdTe detectors with Geant4 simulations.