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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Rignanese, Gian-Marco |
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Litichevskyi, Vladyslav
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Publications (3/3 displayed)
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2019Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurementscitations
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article
Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurements
Abstract
We studied the impact of boundary walls and inclusions to the charge collection efficiency (CCE) of cadmium telluride (CdTe) pad detectors. By using ion beam-induced charge (IBIC) analysis, we were able to locate and classify various defects. We used 2-MeV protons that have a penetration depth of about 40 mu m in bulk CdTe. The detectors we measured had a surface area of 1 cm x 1 cm and a thickness of 1 mm. They were passivated either by using aluminum nitride (AlN) or by aluminum oxide (Al2O3) and had a mesh of titanium tungsten Schottky contacts on both anode and cathode sides. In this paper, we show the results of our measurements and analyze the potential impact of the found defects on the performance of CdTe detectors with Geant4 simulations.