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Van Ginhoven, Renee M.
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article
DC Ionization Conductivity of Amorphous Semiconductors for Radiation Detection Applications
Abstract
DC ionization conductivity measurements were used to characterize the electrical response of amorphous semi-conductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass (CdGexAs2; for x = 0.45-1.0) with a tetrahedrally coordinated structure and a chalcogenide glass (As40Se(60-x)Tex; where x = 0-12), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (α or γ), dose rate, applied bias voltage, specimen thickness and temperature. These results demonstrate the potential of these materials for radiation detection applications.