| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Tseng, Tseung-Yuen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Flower-like nanosheets FeCo2O4 for application in supercapacitor and dye-sensitized solar cellcitations
- 2021Synaptic behaviour of TiO x/HfO2RRAM enhanced by inserting ultrathin Al2O3layer for neuromorphic computingcitations
- 2021Transformation of digital to analog switching in TaO x -based memristor device for neuromorphic applicationscitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2020Facile and One-Step in Situ Synthesis of Pure Phase Mesoporous Li2MnSiO4/CNTs Nanocomposite for Hybrid Supercapacitorscitations
- 2020The synergistic effect of iron cobaltite compare to its single oxides as cathode in supercapacitorcitations
- 2020Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memorycitations
- 2019Synthesis of Free-Standing Flexible rGO/MWCNT Films for Symmetric Supercapacitor Applicationcitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
- 2017Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devicescitations
- 2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmscitations
Places of action
| Organizations | Location | People |
|---|
article
Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory
Abstract
The effect of the TiW barrier layer on the switching properties of Ga-doped ZnO (GZO) nanorods based on Electrochemical Metallization Memory is investigated. Vertically wellaligned and uniform GZO nanorods having a diameter of approximately 35 nm are hydrothermally grown on a seeding layer of ZnO deposited on indium tin oxide (ITO) coated glass substrate, to fabricate Cu/TiW/nanorods/ITO/Glass devices. The remarkable enhancement in the memory window (on/off ratio) is achieved in the 5 nm TiW barrier layer embedded device. This device exhibits endurance of more than 103 cycles and a large memory window of ∼103. The conduction mechanism at different current regions is studied, and it is found that Schottky emission is dominated in the low field region. The TiW barrier layer helps to retain the Cu ions and control the Cu ions diffusion, hence control the filament growth into the resistive layer, confirmed from the X-ray photoelectron spectroscopy (XPS) analysis. This device is suitable for the future low power non-volatile memory devices.