| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Selberherr, Siegfried
TU Wien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2020Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAMcitations
- 2016Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stresscitations
- 2014Microstructural Impact on Electromigration: A TCAD Studycitations
- 2013Multiple Purpose Spin Transfer Torque Operated Devices
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2011Modeling Electromigration Lifetimes of Copper Interconnectscitations
- 2009valley splitting in thin silicon films from a two band k p model
- 2009The Effect of Microstructure on Electromigration-Induced Failure Developmentcitations
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
- 2009Analysis of Electromigration in Dual-Damascene Interconnect Structures
- 2007Electromigration Modeling for Interconnect Structures in Microelectronics
Places of action
| Organizations | Location | People |
|---|
document
perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
Abstract
The two-band k·p model for the conduction band is used to analyze the subband structure in (001) thin silicon films. In contrast to the usually assumed parabolic energy dispersion, the two-band k·p model is able to describe the conduction band structure in the presence of shear strain. It is demonstrated that the unprimed subbands are degenerate only in relatively thick relaxed films. In thin films, the subbands develop different in-plane effective masses. In orthogonal magnetic fields, this leads to a subband splitting linear in the field strength. It also results in a large subband splitting that is observed in [110]-oriented point contacts. With shear strain, the degeneracy between the unprimed subbands in (001) films is lifted. This splitting depends strongly on the film thickness and becomes large in ultrathin films. Strain-induced valley splitting results in reduced scattering and increased spin coherent time, which makes silicon attractive for future spintronic applications.